Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
MOS-AK/ESSDERC/ESSCIRC Workshop
MOS-AK 2009: 20 Years of Enabling Compact Modeling R&D Exchange
 MOS-AK/GSA Workshop's Sponsors
Accelicon Helic Tanner Toshiba ASIC & Foundry
 Technical MOS-AK/GSA Program Promoters
EuroTraining MOSIS
The MOSIS Services
EDA_Solutions GSA 
COMON EC Project
 MOS-AK/GSA Publication Partners
SSE ijnm_wiley
Agenda: Sept. 18 2009 in Athens
  • Morning Session
    • 9:00-11:30 Oral presentations
    • 10:00-10:30 (coffee break)
  • Poster Session
    • 11:30-12:00 Posters
    • 12:00-13:00 (lunch)
  • Afternoon Session
    • 13:00-16:00 Oral presentations
    • 14:30-15:00 (coffee break)
"Frontiers of Compact Modeling" Workshop Program
Display Format: Citation Citation & Abstract
Register Free on-line registration
Venue DIVANI CARAVEL HOTEL, 2 Meg. Alexandrou Aven. 161 21, Athens, Greece
For driving directions please visit: www.ametro.gr and www.oasa.gr
11:30-12:00 Poster Session
P_a  40nm Model Library Insight
James Ashforth-Pook
Accelicon 
Europe
P_b  Advanced Open IDM Model
Eugen Pfumfel
Toshiba Europe
P_c  Electronic Semiconductor Characterization Tool (ESC)
Mostafa Emam, César Roda Neve, Danielle Vanhoenacker-Janvier and Jean-Pierre Raskin
Microwave Laboratory (EMIC), Université catholique de Louvain, 1348 Louvain-la-Neuve (Belgium)
P_d  Simulation study of digital circuits based on nanometric Surrounding Gate Transistors:
the role of quantum and velocity overshoot effects

A.M. Roldán, J.B. Roldán, F. Gámiz
Departamento de Electrónica y Tecnología de Computadores. Universidad de Granada (Spain)
P_e  A new compact model for short-channel, symmetric double gate MOSFET
Anna Sawicka, Lidia Lukasiak and Andrzej Jakubowski
IMIO PW (Poland)
P_f  Modeling of the subthreshold characteristics of Triple-Gate Transistors:
impact of the channel dimensions and back-gate bias

Romain Ritzenthaler, Francois Lime and Benjamin Iniguez
Rovira i Virgili University (Spain)
P_g  A Unified Analytical, Physical and Scalable Lumped Model of RF CMOS Spiral Inductors
Siamak Salimy*,***, Antoine Goullet**, Ahmed Rhallabi**, Serge Toutain*, Fatiha Challali**,***, Jean Claude Saubat***
*IREENA (France), **IMN (France), ***MHS Electronics (France)
P_h Closed-form Current Equation for Short-Channel Triple-Gate FETs
Alexander Kloes* and Michaela Weidemann*/** and Mike Schwarz*/**
*University of Applied Sciences Giessen-Friedberg (Germany), **Universitat Rovira i Virgili (Spain)
P_i Optimization of a RF CMOS technology for high Q inductors
Volker Mühlhaus*, Gerhard Metzger-Brueckl** and Christophe Holuigue***
Muehlhaus*, LFoundry**, Analog Alchemy*** 
(Germany)
P_j Characterization and Modeling of Single Event Transients in LDMOS-SOI FETs
Joaquin Alvarado, Valeria Kilchystka and Denis Flandre
Microelectronics Laboratory, Université catholique de Louvain (Belgium)
P_k Improving Calibration Accuracy of Wafer-Level Measurement System for Confident Over-Temperature RF Device Characterization
Andrej Rumiantsev and Stojan Kanev
SUSS MicroTec Test Systems GmbH (Germany)
P_l Improvements to α-Si RPI-TFT model: now extrinsic and with correct account of the positive differential conductivity after saturation
V.O. Turin*, A.V. Sedov*, G.I. Zebrev**, B. Ińiguez***, and M.S. Shur****
*OrelSTU  (Russia)
, **MEPHI (Russia), ***URV (Spain), ****RPI Troy (USA)
12:00 End of the Poster Session
Committee
  • Benjamin Iniguez, URV; Technical Program Chair
  • Matthias Bucher, TUC; ESSCIRC Tutorials and Workshops Chair
  • Charalambos Dimitriadis, Uni Thessaloniki; ESSDERC Tutorials and Workshops Chair
  • Pekka Ojala, Exar; MOS-AK/GSA WG North America Chair
  • Gilson I Wirth; UFRGS; MOS-AK/GSA WG South America Chair
  • Ehrenfried Seebacher, austriamicrosystems AG; MOS-AK/GSA WG Europe Chair
  • Al Kordesch, Silterra Malaysia; MOS-AK/GSA WG Asia/Pacific Chair
  • Chelsea Boone GSA; Senior Research Analyst
  • Darryl Leavitt, GSA; Director of Events
  • Wladek Grabinski, GMC Suisse; MOS-AK/GSA Workshop Manager
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No.#5857
update: Sept.28 2009 (rev. a)
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