Arbeitskreis MOS-Modelle und Parameterextraktion

MOS Modeling and Parameter Extraction Working Group
11th MOS-AK/GSA ESSDERC ESSCIRC Workshop

Sept. 20, 2013 Bucharest
MOS-AK: Over Two Decades of Enabling Compact Modeling R&D Exchange
Workshop Sponsors
Agilent
Lead Sponsor
LFoundy Microchip
Infineon
Keynote Speaker Sponsor
Enz Group
MOS-AK Workshop Program
Venue: JW Marriott Bucharest Grand Hotel
Calea 13 Septembrie 90
Bucharest 050726
Romania
 
Workshop Agenda
 9:00 - 12:00 Morning Session - Chair: Prof. Andrei Vladimirescu, ISEP (F); UCB (USA)
O_1  Welcome and Workshop Opening
W. Grabinski
MOS-AK Group (EU) 
K_2  SPICE In The Twenty-First Century
Larry Nagel
Omega Enterprises Consulting (USA)
T_3  NGSPICE: recent progresses and future plans
Paolo Nenzi*, Francesco Lannutti*, Robert Larice**, Holger Vogt**, Dietmar Warning**
*DIET - Sapienza University of Roma (I), ** NGSPICE Development Team
T_4  KCL and Linear/NonLinear Separation in NGSPICE
Francesco Lannutti
DIET - Sapienza University of Roma (I) and NGSPICE Development Team

Coffee Break
T_5  Modeling Junction Less FETs
Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut
EPFL (CH)
T_6  HiSIM-Compact Modeling Framework
Hans Juergen Mattausch
Uni. Hiroshima (J)
P_7  The Correct Account of Nonzero Differential Conductance in the Saturation Regime in the MOSFET Compact Model
Valentin Turin*, Gennady Zebrev**, Sergey Makarov***, Benjamin Iniguez****, and Michael Shur*****
*State University-ESPC (RU),**MEPHI (RU),***SYMICA Inc (RU),****URV (SP),*****RPI (USA)
12:00 -13:00
Lunch Break
13:00 -16:00
Afternoon Session - Chair: W. Grabinski, MOS-AK Group (EU)
T_8  State of the Art Modeling of Passive CMOS Components
Bernd Landgraf
Infineon Technologies (A)
T_9  Compact I-V Model of Amorphous Oxide TFTs
Benjamin Iniguez*,Alejandra Castro-Carranza* , Muthupandian Cheralathan* , Slobodan Mijalkovic**, Pedro Barquinha***, Elvira Fortunato***, Rodrigo Martins***,Magali Estrada****, and Antonio Cerdeira****
*URV (SP), **Silvaco Ltd (UK), ***UNL(P), ****CINVESTAV (MEX)

Coffee Break
T_10  Three-Dimensional Electro-Thermal Circuit Model of Power Super-Junction MOSFET
Aleš Chvála, Daniel Donoval, Juraj Marek, Patrik Príbytný and Marián Molnár
Institute of Electronics and Photonics, Slovak University of Technology in Bratislava (SK)
T_11  A Close Comparison of Silicon and Silicon Carbide Double Gate JFETs
Matthias Bucher, Rupendra Sharma
Technical University of Crete, Chania, (GR)
T_12  Towards wide-frequency substrate model of advanced FDSOI MOSFET
Sergej Makovejev, Valeriya Kilchytska, Jean-Pierre Raskin, Denis Flandre
UCL (B)
P_13
A Simple GNU Octave-Based Tool for Extraction of MOSFET Parameters
Daniel Tomaszewski, Grzegorz Gluszko
ITE, Warsaw (PL)
16:00
End of the MOS-AK Workshop
Scienttific Coordination: Extended MOS-AK/GSA Committee
<
No.#8463
update: OCT 2013 (rev. F)
Contents subject to change ©1999-2013 All rights reserved. WG
Graphics © 2013 Oliver