Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
MOS-AK Workshop at ESSDERC/ESSCIRC
Dresden, Sept. 3 2018
MOS-AK: Enabling Compact Modeling R&D Exchange
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MOS-AK Workshop Program
Important Dates:
  • Call for Papers - June 2018
  • 2nd Announcement - July 2018
  • Final Workshop Program - July 2018
  • MOS-AK Workshop: Sept. 3, 2018
  • ESSDERC Track4 "Compact modeling of devices and circuit" Sept. 5-6, 2018
    • Wednesday 14:20-15:40 B4L-G Compact Modeling (3 papers)
      Chair: Wladek Grabinski, Thierry Poiroux
    • Thursday 10:20-12:0 C2L-F Compact Modeling of Electron Devices (4 papers)
      Chair: Daniel Tomaszewski, Benjamin Iniguez
Venue:
Technische Universität Dresden
room CHE/0184/U
Dresden (D)

Agenda
Display Format: Citation Citation & Abstract
9:00-12:30
MOS-AK Morning Session I - Chair: Larry Nagel, OEC (USA)
T_0  MOS-AK Overview
W. Grabinski, Larry Nagel
MOS-AK (EU), OEC (USA)
T_1  Physically Compliant CMOS Electronics Enabled Interactive Electronic System
Muhammad Mustafa Hussain
KAUST (SA)
T_2  RF CMOS Compact modelling technologies past and future
Sadayuki Yoshitomi
TOSHIBA Memory Corporation (J)
10:00-10:30
Coffee Break
10:30-12:30
MOS-AK Morning Session II - Chair: Suba Subramaniam, XFAB (D)
T_3  Analysis and modelling of wafer level process variability in advanced FD-SOI devices using split C-V and gate current data
Krishna Pradeep1,2, T. A. Karatsori2, T. Poiroux3, A. Juge1, P. Scheer1, G. Gouget1, and G. Ghibaudo2
1) STMicroelectronics, Crolles Site, 850 rue Jean Monnet, 38926 Crolles, France
T_4  Equivalent Correlation between Short Channel DG & GAA MOSFETs
Kerim Yılmaz, Ghader Darbandy, Benjamín Iñíguez, François Lime and Alexander Kloes
THM (D), URV (SP)
T_5  Compact Modeling For Neuromorphic Applications
L.E. Calvet*, C. Bennett*, D. Querlioz*, T. Krauss**, U. Schwalke**, A. Kloes*** and M. Schwarz***
* Center for Nanoscience and Nanotechnology, Universit Paris-Sud, France. ** TU Darmstadt, Germany. *** NanoP, Technische Hochschule Mittelhessen, Germany.
T_6  Advanced PDK and Technologies accessible through ASCENT”
Luca Perniola, Paul Roseingrave
CEA (F) Tyndall (IR)
12:30-14:00
Lunch Break
14:00-16:00
MOS-AK Afternoon Session - Chair: Matthias Bucher, TUC (GR)
T_7  Reliability Modeling in Harsh Radiation for Space Applications
Farzan
Jazaeri, Christian Enz
ICLab, EPFL (CH)
T_8  Low frequency noise modeling of organic and IGZO TFTs.
Benjamin Iñiguez*, Gerard Uriarte*, Wondwosen E. Muhea* and Thoms Gneiting**
*Universitat Rovira i Virgili, Tarragona, Spain, **AdMOS GmBH, Germany
T_9  Schottky Barrier Mosfet Device Physics For Cryogenic Applications
M. Schwarz*, L. E. Calvet**, J. P. Snyder***, T. Krauss****, U. Schwalke****, and A. Kloes*
* NanoP, Technische Hochschule Mittelhessen, Germany. ** Center for Nanoscience and Nanotechnology, Universit Paris-Sud, France. *** JCap, LLC, USA. **** TU Darmstadt, Germany.
T_10  Compact Modeling for Process and Device Characterization
Daniel Tomaszewski* and Wladek Grabinski**
*ITE (PL), **GMC (CH)
16:00-16:30
Coffee Break
16:30
End of the MOS-AK workshop



Extended MOS-AK Committee:
Committee
  • MOS-AK Organzation Committe
    • Suba Subramaniam, XFab (D)
    • Daniel Tomaszewski, ITE (PL)
    • Wladek Grabinski, MOS-AK (EU)
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Committee
    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Prof. Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
    MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Suba Subramaniam, XFab (D)
  • Co-Chair: Prof. Benjamin Iniguez, URV (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK/GSA Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba Memory Corporation (J)
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Kaikai Xu, 电子科技大学 (CN)  
  • Co-Chair: Xing Zhou, NTU Singapore (SG)  
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