Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
Spring MOS-AK Workshop
THM Giessen (D), Sept. 30 - Oct. 1, 2020
Calendar
Open Directory
Books
Mission
Committee
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Techical Program Promoters
 
THM
IEEE EDS
IEEE IEEE_YP_Germany
AdMOS SSE Publication Partner
Publication Partner
Event  Rescheduled
Important Announcement: Due to very recent COVID-19 regulations at THM, no events gathering of the external attendees are allowed in the next weeks. These rules are pure precautionary measures, which apply until April 30 and should help to minimize the infection risk at the THM campus. MOS-AK Workshop shedulled for March 17-18, 2020 with Symposium on Schottky barrier MOS devices and IEEE EDS Mini Colloquium "Non-conventional devices and technologies" to be cancelded

The event has been rescheduled and new dates are:
  • Wed 30.09.2020 - MOS-AK
  • Thu 01.10.2020 - IEEE MQ & SB MOS Symposium
Venue: Competence Center for Nanotechnology and Photonics
THM Giessen 
building D12
Wed 30.09.2020 (Room D12.0.10)
09:10-09:10 Opening MOS-AK Workshop
09:10-09:30
Simulation and Modeling of Semiconductor Devices in MEMS
Mike Schwarz, Robert Bosch GmbH (DE)
09:30-09:50

QucsStudio and Qucs-S Verilog-A compact device modelling:
current features and future developments
Mike Brinson, London Metropolitan University (GB)
09:50-10:10


Statistical circuit analysis by NOVA (Noise Based Variability Approach)
Aristeidis Nikolaou*, Jakob Leise*, Jakob Pruefer*, Ute Zschieschang**,
Hagen Klauk**, Ghader Darbandy*, Alexander Kloes*,
*THM (DE), **Max Planck Institute for Solid State Research Stuttgart (DE)
10:10-10:50 COFFEE BREAK
10:50-11:10


Approaches for analytical (compact) modeling of tunneling current
in MOS transistors
Alexander Kloes, TH Mittelhessen University of Applied Sciences,
Giessen (DE)
11:10-11:30

Modeling of GaN HEMTs on Silicon Substrate
Mahimna Dwivedi*, Sayed Ali Albahrani*, Thomas Gneiting*, Lars Heuken**,
Joachim Burghartz**, *AdMOS GmbH (DE), **IMS Chips (DE)
11:30-11:50


Adopting the Industry-standard CMOS Models for
Si Vertical Power MOSFETs
Lixi Yan, Ingmar Kallfass, Insitute of Robust Power Semiconductor Systems,
University of Stuttgart (DE)
11:50-13:30 LUNCH
12:30-13:30 ED15 Germany Chapter Meeting (Room D12.0.08/09)
13:30-13:50



 
THz Schottky detectors based on GaAs and InGaAs materials
using metallic NWs or evaporated finger contacts
Ahid S. Hajo, Oktay Yilmazoglu, Franko Küppers and Thomas Kusserow,
Technical University Darmstadt, Institute for Microwave Engineering
and Photonics (IMP) (DE)
13:40-14:10 


 
Fabrication and Application of Nanocrystalline Diamond Thin Films
and Hybrid Diamond-Silicon Sensor Applications
Markus Mohr, Hans-Jrg Fecht Ulm University, Institute of Functional
Nanosystems (DE)
14:10-14:30

Injection Barrier Modification by Organic Monolayers
A. A. Hauke, F. Widdascheck, G. Witte, Molecular Solid State Physics Group,
Philipps-Universität Marburg, Marburg (DE)
14:30-14:50 


 
Promises and challenges of memristor-based artificial neural networks
E. Perez*, M.K. Mahadevaiah*, E. Perez-Bosch Quesada*, Ch. Wenger*/**,
*IHP-Leibniz-Institut fr Innovative Mikroelektronik, Frankfurt (Oder) (DE),
**Brandenburg Medical School Theodor Fontane, Neuruppin (DE)
14:50-15:20 COFFEE BREAK
15:20-15:40
Non-linear noise effects and circuit simulation in 28nm FD SOI CMOS
Denis Flandre, UCL (B)
15:40-16:00



Efficient Demagnetizing Field Calculation in STT-MRAM Cells
J. Ender*, S. Fiorentini*, M. Mohamedou*, Wolfgang Goes**,
Roberto Orio***, Viktor Sverdlov*, *CDL NovoMemLog,
Institut für Mikroelektronik, TU Wien (A), **Silvaco Europe,
***Institut für Mikroelektronik, TU Wien (A)
16:00-16:20
TBD
Gharder Darbandy, TH Mittelhessen University of Applied Sciences, Giessen, (D)
16:20-16:25   Opening IEEE MINI COLLOQIUM
16:25-17:10
Analysis and modeling of OTFTs and IGZO TFTs from 150 to 350K
Benjamin Iniguez, URV (ES)
18:30 BUS TRANSFER
19:00-22:30 DINNER BADENBURG (Invited guests & First come, first serve!)
Thu 01.10.2020 (Room D12.0.10)
09:00 MINI COLLOQIUM
09:00-09:45
Ultra-Thin Si Chips - A New Paradigm in Silicon Technology
Joachim Burghartz, IMS-CHIPS (DE)
09:45-10:30
FOSS TCAD/EDA Tools for Advanced Compact Modeling
Wladek Grabinski, MOS-AK (EU)
10:30-11:00 COFFEE BREAK
11:00-11:45
2D Electronics – Opportunities and Challenges
Frank Schwierz, TU Ilmenau (DE)
11:45-12:30
Stability and Reliability of 2D Transistors
Tibor Grasser, TU Vienna, (AT)
12:30-14:00 LUNCH
14:00-14:10 Opening SYMPOSIUM SB MOS
14:10-14:40
Metal-Insulator-Graphene RF Diodes: From Devices to Integrated Circuits
Zhenxing Wang, AMO (DE)
14:40-15:10
Schottky barrier devices for neuromorphic computing
Laurie Calvet, Paris (FR), John Snyder (US), Mike Schwarz, NanoP (DE)
15:10-15:40 COFFEE BREAK
15:40-16:10

Nanowire metal -semiconductor heterostructures for functionality
enhancement and quantum transport
Walter Weber, TU Vienna (AT)
16:10-16:40

 
Schottky-type Contacts in Ultra-Short Channel Organic Semiconductor
Devices for GHz-Operation
Hans Kleemann, TU Dresden(DE)
16:40 CLOSING
Best
papers of the Joint Spring MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) devices will be selected for a special Solid-State-Electronics (SSE) compact modeling issue of MOS-AK activities.

International MOS-AK Committee:
Committee
  • Local Organization Committee:
    • Prof. Dr.-Ing. Alexander Kloes; Technische Hochschule Mittelhessen, THM Giessen, NanoP (D)
    • Prof. Laurie Calvet, C2N, Palaiseau, (F)
    • Dr.-Ing. Mike Schwarz; Robert Bosch GmbH, NanoP (D)
      reprezenting
      IEEE Region 8 - Western Europe Regional
      IEEE YP Germany
      IEEE Electron Devices Society
      IEEE EDS Compact Modeling Committee
  • International MOS-AK Board of R&D Advisers:
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Committee:
    MOS-AK North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK South America
  • Chair: Prof. Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
  • Co-Chair: Roberto S. Murphy, INAOE (MX)
  • MOS-AK Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Sanjay Mane, XFab (D)
  • Co-Chair: Benjamin Iniguez, URV (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Kaikai Xu, 电子科技大学 (CN)  
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No.#2023
update: Feb.2020 (rev. a)
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