Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
Spring MOS-AK Workshop
THM Giessen (D), March 17-18, 2020
Calendar
Open Directory
Books
Mission
Committee
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Techical Program Promoters
 
THM
IEEE EDS
IEEEIEEE_YP_Germany
AdMOS
Preannouncement and Call for Papers
Important Dates:
  • Call for Papers - Oct. 2019
  • 2nd Announcement - Jan. 2020
  • Final Workshop Program - Feb. 2020
  • MOS-AK Workshop: March 17-18, 2020
    with Symposium on Schottky barrier MOS devices
    and IEEE EDS Mini Colloquium "Non-conventional devices and technologies"
Venue:Competence Center for Nanotechnology and Photonics
building D12
THM Giessen (D)
Paper Submission: 
Intended authors should send an abstract (max. 300 words) to the email (alexander.kloes(at)ei.thm.de) with the event of interest and note the following deadlines:
Receipt of abstract Feb. 24, 2020 (Monday)
Notification of acceptance Feb. 29 2020
Online Free Registration till March 6, 2020

 Synopsis and Workshop Topics
Synopsis:
  • HiTech forum to discuss the frontiers of electron device modeling with emphasis on simulation-aware compact/SPICE models and its Verilog-A standardization.
  • MOS-AK Meetings are organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/Spice modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development, implementation, deployment and standardization within the main theme - frontiers of the compact modeling for nm-scale MEMS/NEMS designs, CMOS/SOI and HEMT IC simulation.
  • The specific workshop goal will be to classify the most important directions for the future development of the electron device models, not limiting the discussion to compact models, but including physical, analytical and numerical models, to clearly identify areas that need further research and possible contact points between the different modeling domains. This workshop is designed for device process engineers (CMOS, SOI, BiCMOS, SiGe, GaN, InP) who are interested in device modeling; ICs designers (RF/Analog/Mixed-Signal/SoC/Bio/Med) and those starting in that area as well as device characterization, modeling and parameter extraction engineers. The content will be beneficial for anyone who needs to learn what is really behind the IC simulation in modern device models.
Topics: to be covered include the following:
  • Advances in semiconductor technologies and processing
  • Compact Modeling (CM) of the electron devices
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • Open Source FOSS TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, CMOS and SOI-based memory cells
  • Microwave, mmW, RF device modeling, high voltage device modeling
  • Microsystems, SoC, IP modeling
  • Device level modeling for Bio/Med applications
  • Nanoscale semiconductor devices/circuits and its reliability/ageing
  • Technology R&D, DFY, DFT and IC Designs
  • Foundry/Fabless Interface Strategies
Speakersopen tentaieve list:
  • Dr. Laurie E. Calvet (C2N, CNRS-Université Paris-Sud)
  • Prof. Benjamin Iniguez (DEEEA, Universitaet Rovira I Virgili)
  • Prof. Max Lemme (RWTH Aachen, Germany)
  • Prof. Walter Weber (TU Vienna, Austria)
  • Prof. Alexander Kloes (THM Giessen, NanoP, Germany)
  • Dr. Mike Schwarz (Robert Bosch GmbH, NanoP THM, Germany)

International MOS-AK Committee:
Committee
  • Local Organization Committee
    • Prof. Dr.-Ing. Alexander Kloes; Technische Hochschule Mittelhessen, THM Giessen, NanoP (D)
    • Prof. Laurie Calvet, C2N, Palaiseau, (F)
    • Dr.-Ing. Mike Schwarz; Robert Bosch GmbH, NanoP (D)
      reprezenting
      IEEE Region 8 - Western Europe Regional
      IEEE YP Germany
      IEEE Electron Devices Society
      IEEE EDS Compact Modeling Committee
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Committee
    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Prof. Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
  • Co-Chair: Roberto S. Murphy, INAOE (MX)
  • MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Suba Subramaniam, XFab (D)
  • Co-Chair: Prof. Benjamin Iniguez, URV (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK/GSA Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Kaikai Xu, 电子科技大学 (CN)  
  • Co-Chair: Xing Zhou, NTU Singapore (SG)  
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update: Oct. 2019  (rev. a)
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