Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
Virtual Spring MOS-AK Workshop
THM Giessen (D), Sept. 30 - Oct. 1, 2020
Calendar
Open Directory
Books
Mission
Committee
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Techical Program Promoters
 
THM
IEEE EDS
IEEE IEEE_YP_Germany
AdMOS SSE Publication Partner
Publication Partner
Event  Rescheduled
Important Announcement: Due to very recent COVID-19 regulations at THM, no events gathering of the external attendees are allowed in the next weeks. These rules are pure precautionary measures, which apply until April 30 and should help to minimize the infection risk at the THM campus. MOS-AK Workshop shedulled for March 17-18, 2020 with Symposium on Schottky barrier MOS devices and IEEE EDS Mini Colloquium "Non-conventional devices and technologies" will be organized as a virtual event with new preliminary dates:
Dates:
  • Tue 29.09.2020 - MOS-AK
  • Wed 30.09.2020 - MOS-AK & IEEE EDS MQ
  • Thu 01.10.2020 - IEEE EDS MQ & SB MOS Symposium
Venue: Competence Center for Nanotechnology and Photonics
THM Giessen (Virtual Rooms)

TUE 29.09.2020 (Virtual Room)
09:15-09:30 Opening MOS-AK Workshop
09:30-09:50
Simulation and Modeling of Semiconductor Devices in MEMS
Mike Schwarz, Robert Bosch GmbH (DE)
09:50-10:10

SweepMe! - a modular, flexible, and versatile software platform for device characterization
Axel Fischer, SweepMe!, Dresden (DE)
COFFEE BREAK
10:50-11:10


Statistical circuit analysis by NOVA (Noise Based Variability Approach)
Aristeidis Nikolaou*, Jakob Leise*, Jakob Pruefer*, Ute Zschieschang**,
Hagen Klauk**, Ghader Darbandy*, Alexander Kloes*,
*THM (DE), **Max Planck Institute for Solid State Research Stuttgart (DE)
10:10-11:30
Approaches for analytical (compact) modeling of tunneling current in MOS transistors
Alexander Kloes, THM Giessen (DE)
LUNCH BREAK
13:00-13:20

Modeling of GaN HEMTs on Silicon Substrate
Mahimna Dwivedi*, Sayed Ali Albahrani*, Thomas Gneiting*, Lars Heuken**,
Joachim Burghartz**, *AdMOS GmbH (DE), **IMS Chips (DE)
13:20-13:50


Adopting the Industry-standard CMOS Models for Si Vertical Power MOSFETs
Lixi Yan, Ingmar Kallfass, Insitute of Robust Power Semiconductor Systems,
University of Stuttgart (DE)
COFFEE BREAK
14:10-14:30  THz Schottky detectors based on GaAs and InGaAs materials using metallic NWs or evaporated finger contacts
Ahid S. Hajo, Oktay Yilmazoglu, Franko Küppers and Thomas Kusserow,
Technical University Darmstadt, Institute for Microwave Engineering
and Photonics (IMP) (DE)
14:30-14:50


 
Fabrication and Application of Nanocrystalline Diamond Thin Films
and Hybrid Diamond-Silicon Sensor Applications
Markus Mohr, Hans-Jörg Fecht Ulm University, Institute of Functional
Nanosystems (DE)
WED 30.09.2020 (Virtual Room)
9:30-9:50

Injection Barrier Modification by Organic Monolayers
A. A. Hauke, F. Widdascheck, G. Witte, Molecular Solid State Physics Group,
Philipps-Universität Marburg, Marburg (DE)
9:50-10:10
 
Non-linear noise effects and circuit simulation in 28nm FD SOI CMOS
Denis Flandre, UCL (B)
COFFEE BREAK
10:50-11:10
Efficient Demagnetizing Field Calculation in STT-MRAM Cells
11:10-11:30
Emerging Devices: RFET and OPBT
Gharder Darbandy, THM, Giessen, (D)
LUNCH
   Opening IEEE EDS MINI COLLOQIUM
13:00-13:45Analysis and modeling of OTFTs and IGZO TFTs from 150 to 350K
Benjamin Iniguez, URV, (ES)
COFFEE BREAK
09:00-09:45
Ultra-Thin Si Chips - A New Paradigm in Silicon Technology
Joachim Burghartz, IMS-CHIPS (DE)
THU 01.10.2020 (Virtual Room)
09:45-10:30
FOSS TCAD/EDA Tools for Advanced Compact Modeling
Wladek Grabinski, MOS-AK (EU)
COFFEE BREAK
11:00-11:45
2D Electronics – Opportunities and Challenges
Frank Schwierz, TU Ilmenau (DE)
COFFEE BREAK
11:45-12:30
Stability and Reliability of 2D Transistors
Tibor Grasser, TU Vienna, (AT)
LUNCH BREAK
12:50-13:00 Opening SYMPOSIUM SB MOS
13:00-13:30
Metal-Insulator-Graphene RF Diodes: From Devices to Integrated Circuits
Zhenxing Wang, AMO (DE)
13:30-14:00
Schottky barrier devices for neuromorphic computing
Laurie Calvet, Paris (FR), John Snyder (US), Mike Schwarz, NanoP (DE)
COFFEE BREAK
14:30-15:00

Nanowire metal-semiconductor heterostructures for functionality enhancement and quantum transport
Walter Weber, TU Vienna (AT)
15:00-15:30 Schottky-type Contacts in Ultra-Short Channel Organic Semiconductor Devices for GHz-Operation
Hans Kleemann, TU Dresden(DE)
15:30 CLOSING
Best
papers of the Joint Spring MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) devices will be selected for a special Solid-State-Electronics (SSE) compact modeling issue of MOS-AK activities.

International MOS-AK Committee:
Committee
  • Local Organization Committee:
    • Prof. Dr.-Ing. Alexander Kloes; Technische Hochschule Mittelhessen, THM Giessen, NanoP (D)
    • Prof. Laurie Calvet, C2N, Palaiseau, (F)
    • Dr.-Ing. Mike Schwarz; Robert Bosch GmbH, NanoP (D)
      reprezenting
      IEEE Region 8 - Western Europe Regional
      IEEE YP Germany
      IEEE Electron Devices Society
      IEEE EDS Compact Modeling Committee
  • International MOS-AK Board of R&D Advisers:
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Committee:
    MOS-AK North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK South America
  • Chair: Prof. Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
  • Co-Chair: Roberto S. Murphy, INAOE (MX)
  • MOS-AK Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Sanjay Mane, XFab (D)
  • Co-Chair: Benjamin Iniguez, URV (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Kaikai Xu, 电子科技大学 (CN)  
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update: Feb.2020 (rev. a)
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