Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
MOS-AK/GSA ESSDERC/ESSCIRC Workshop
Sept. 16, 2011  Helsinki
MOS-AK:  Enabling Compact Modeling R&D Exchange
  Technical MOS-AK/GSA Program Promoters
COMON EC Project EETimes GSA

EuroTraining MOSIS
The MOSIS Services
MOS-AK Workshop Program
Venue: Finlandia Hall in Helsinki, Finland
08:30 MOS-AK/GSA Workshop Opening: Wladek Grabinski, GMC Suisse
08:35 ITRS perspective on the compact model developments
Herve Jaouen, STM (F); Bert Huizing, NXP (NL); Juergen Lorenz, Fraunhofer (D)
09:00 SiC Technology Research and Modeling
Victor Luchinin, Uni. St.Petersburg, ETU "LETI" (RU)
09:30 MOS-AK/GSA Poster Session
10:00 Coffee Break
10:30 Panel "40th Anniversary of SPICE"
Semiconductor Device Models - A Key Ingredient of SPICE for 40 Years
Andrei Vladimirescu, BWRC, UC Berkeley and ISEP, Institut d'Electronique de Paris
11:00 Panel Discussion; (panelists alphabetic list)

Christian Enz, EPFL, CH
Chenming Hu, UC Berkeley, USA
Paolo Nenzi, ngspice, Uni Roma, I
Willy Sansen, ESAT-MICAS, B (moderator)
Ehrenfried Seebacher, austriamicrosystems, A
Andrei Vladimirescu, BWRC, UC Berkeley, USA

BSIM-EKV Collaboration Announcement
12:00 Lunch Break
13:30 Modeling of HV Transistors with HiSIM_HV, Benchmarks and new developments
Ehrenfried Seebacher, AMS (A); Mitiko Miura-Mattausch and Hans Juergen Mattausch, Uni. Hiroshima (J)
14:00 Modeling flow and model improvement for I3T ON Semiconductor technologies
Petr Betak, Petr Zavrel, Lenka Sochova, Jan Plojhar, OnSemi (CZ)
14:30 Coffee Break
15:00 A physics based analytical 2DEG charge density and drain current model for AlGaN/GaN HEMT devices
S. Khandelwal and T. A. Fjeldly; Norwegian University of Science and Technology, (N)
15:30 Macro Model for Drift/Diffusion Effects in Short-Channel Undoped Schottky Barrier DG-MOSFETs;
Mike Schwarz*,**, Thomas Holtij*,**, Alexander Kloes*, and Benjamín Iñíguez** *Technische Hochschule Mittelhessen (D), **Universitat Rovira i Virgili (E)
16:00 A cumulative distribution function-based method for yield optimization of CMOS ICs;
Marat Yakupov and Daniel Tomaszewski, ITE Warsaw (PL)
16:30 End of the MOS-AK Workshop
Committee: Extended MOS-AK/GSA Committee:
  • Chelsea Boone, GSA Director of Research 
  • Wladek Grabinski, GMC Suisse; MOS-AK/GSA Group Manager
    MOS-AK/GSA North America:
  • Chair: Pekka Ojala, Exar Corporation
  • Geoffrey Coram, Analog Devices
  • Jamal Deen, U.McMaster
  • Roberto Tinti, Agilent EEsof Division
    MOS-AK/GSA South America:
  • Chair: Gilson I Wirth; UFRGS; Brazil
  • Prof. Carlos Galup-Montoro, UFSC; Brazil
  • Sergio Bampi, UFRGS, Brazil
  • Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK/GSA Europe:
  • Chair: Ehrenfried Seebacher, austriamicrosystems AG
  • Alexander Petr, XFab
  • Benjamin Iniguez, URV 
  • James Victory, Sentinel-IC
    MOS-AK/GSA Asia/Pacific:
  • Chair: Goichi Yokomizo, STARC, Japan
  • Sadayuki Yoshitomi, Toshiba, Japan
  • A.B. Bhattacharyya, JIIT, India
  • Xing Zhou, NTU, Singapore
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No.# 14618
update: Oct 2011 (rev. F)
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