Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
MOS-AK/GSA Workshop
March 16-18, 2012  India
MOS-AK:  Enabling Compact Modeling R&D Exchange
  In Collaboration with
 
INAE
INDIAN NATIONAL ACADEMY OF ENGINEERING 
 
 MOS-AK/GSA Workshop Sponsors
Platinium Sponsors

austriamicrosystems
 
IBM
Gold Sponsors



TI
DIT
DIT

STM

JIIT
Silver Sponsors


MENTOR
CSIR
Cadence

MASAMB

  Technical MOS-AK/GSA Program Promoters
COMON EC Project COMON EC Project GSA
EuroTraining IEEE EDS
IEEE EDS Chapter Delhi
MOSIS
The MOSIS Services
MOS-AK/GSA Workshop
Venue: Jaypee Institute of Information Technology (JIIT),
A-10, Sector-62, Noida (U.P.), India
Phone: 0120-2400973-976, 2400987 


Technical Workshop Poster Session Program

Poster Session
P-1
Compact Model based Efficient Methodology for Successful Technology Transfer
A.N. Chatterjee, V.N. Vanukuru ,S. Parthasarathy,
IBM, D3 MEBP, Nagawara, ORR, Bangalore – 560045
P-2
MOSFET Modeling and Parameter Extraction for Low Distortion Analog Circuits operating in Triode Region
Subhajit Sen, DA-IICT, Gandhinagar, Gujrat

P-3
Electro-Thermal Modeling in Metallic Carbon Nanotube Interconnects
Rekha Verma, Sitangshu Bhattacharyya and Santanu Mahapatra
Indian Institute of Science, Bangalore, 560012, India.
P-4
Small Signal Modeling and Parameter Extraction Technique for Overlap and Underlap Double Gate MOSFET for RF Circuit Design
Saptak Niyogi 1, Kalyan Koley 1, Chandan Kumar Sarkar 1, Soumya Pandit 2
1. Jadavpur University, 2. IRPE,Kolkata.
P-5
Analytical Study of Vertical Channel Engineering Approaches for Reduction of Threshold Voltage Variation for Low Power Applications
Arka Dutta 1, Chandan Kumar Sarkar 2, Samar K. Saha 2, Soumya Pandit 3,
1.Jadavpur University, 2.Su Volta Inc ,Las Getos, USA, 3. IRPE,Kolkata.
P-6
Look-up Table based Automated FinFET Circuit Design
R. A. Thekker 1, Chaitanya Satne 2, Maryam Shojaei 3, M.B. Patil 3
1.EC Department, VCFC, Gandhinagar. Gujrat; 2.EE Department , University of Illonis, Urbana, USA; 3. EE Department, IIT Mumbai
P-7
On-Chip Interconnect Compatible Physical Modeling of RF Spiral Inductors
Vibhu Srivastava, A.B. Bhattacharyya, Jaypee Institute of Information
Technology, Noida, U.P.
P-8
Design of High Precision CMOS Bandgap Reference and Simulation across PVT Corners
Hari Shanker Gupta 1, Jayesh Jayaran 1, Sanjeev Metha 1, Sandip Paul 1, R.M. Parmar 1, D.R.M Samudraiah, Dr.Dinesh Kumar Sharma 2
1.ISRO Ahmedabad, 2. IIT, Mumbai,

MOS-AK India Committee
Committee: International Advisory Committee:
  • Prof. A.B.Bhattacharyya, JIIT, India (Chair) 
  • Ehrenfried Seebacher, Austriamicrosystems AG, Austria (Co-Chair)  
  • Wladek Grabinski, MOS-AK (European Arrangements Co-Chair)
  • M.J. Zarabi, Chairman, INAE forum on Microelectronics & Vice-President, INAE India
  • K.D. Nayak, DRDO, New Delhi
  • Andre Juge, ST Microelectronics, France
  • Vinod Menzes, TI, India
  • Narain D Arora, Silterra, Malaysia
  • Vivek Sharma, ST Microelectronics, India
  • Ganesh Guruswamy, Freescale, India
  • Vipin Madangarli, IBM, India
  • Abhishek Dixit, IBM, India
  • Vijay Kumar Ivaturi, Wipro Limited, India
  • Jyotirmoy Daw, Mentor Graphics, Noida
  • Jaswinder Ahuja, Cadence, Noida
  • Pradip K Dutta, Synopsys, India & Chairman, ISA, India
  • Praveen Vishakantaiah, Intel, India
  • Juzer Vasi, IIT, Mumbai
  • Ramgopal Rao, IIT, Mumbai
  • Navkant Bhat, IISC, Bangaluru
  • S. Koul, IIT, Delhi 
  • Amitava Dasgupta, IIT, Madras
  • Y. Medury, JIIT, India
Organizing MOS-AK/GSA Committee:
  • Prof. A.B. Bhattacharyya, JIIT, India (Chair)
  • Ehrenfried Seebacher, Austriamicrosystems AG, Austria (Co-Chair)  
  • Wladek Grabinski, MOS-AK (European Arrangements Co-Chair)
  • M.J. Zarabi, Chairman, INAE forum on Microelectronics & Vice-President, INAE India 
  • Varambally Rajamohan, ST Microelectronics, India 
  • S.C. Saxena, JIIT, Noida
  • Shantanu Mahapatra, IISc, India
  • Kulbhushan Misri, Freescale, India 
  • M. Jagdesh Kumar, IIT Delhi, India 
  • Manoj Saxena, Delhi University, India
Extended MOS-AK/GSA Committee:
  • Chelsea Boone, GSA Director of Research  
  • Wladek Grabinski, GMC Suisse; MOS-AK/GSA Group Manager
    MOS-AK/GSA North America:
  • Chair: Pekka Ojala, Exar Corporation
  • Geoffrey Coram, Analog Devices
  • Jamal Deen, U.McMaster
  • Roberto Tinti, Agilent EEsof Division
    MOS-AK/GSA South America:
  • Chair: Gilson I Wirth; UFRGS; Brazil
  • Prof. Carlos Galup-Montoro, UFSC; Brazil
  • Sergio Bampi, UFRGS, Brazil
  • Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK/GSA Europe:
  • Chair: Ehrenfried Seebacher, austriamicrosystems AG
  • Alexander Petr, XFab
  • Benjamin Iniguez, URV 
  • James Victory, Sentinel-IC
    MOS-AK/GSA Asia/Pacific:
  • Chair: Goichi Yokomizo, STARC, Japan
  • Sadayuki Yoshitomi, Toshiba, Japan
  • A.B. Bhattacharyya, JIIT, India
  • Xing Zhou, NTU, Singapore
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No.# 2892
update: March 2012 (rev. F)
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