Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
3rd Sino MOS-AK Workshop
Peking, June 14-16 2018
Open Directory
MOS-AK: Enabling Compact Modeling R&D Exchange
Technical MOS-AK Program Promoters
Publishing Partner
Preannouncement and Call for Papers
Important Dates:
  • Call for Papers - March 2018
  • 2nd Announcement - April 2018
  • Final Workshop Program - May 2018
  • MOS-AK Workshop - June 14-16 2018
    • Day 1: MOS-AK Tutorial Day
    • Day 2: MOS-AK SPICE/Verilog-A Modeling Workshop
    • Day 3: MOS-AK SPICE/Verilog-A Modeling Workshop
Tsinghua University
close to Tsinghua Unisplendour International Center
 registration is open (any related enquiries can be sent to
   Synopsis and Workshop Topics
  • HiTech forum to discuss the frontiers of electron device modeling with emphasis on simulation-aware compact, SPICE and Verilog-A models.
  • MOS-AK Meetings are organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/Spice modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development, implementation, deployment and standardization within the main theme - frontiers of the compact modeling for nm-scale MEMS designs and CMOS/SOI circuit simulation.
  • The specific workshop goal will be to classify the most important directions for the future development of the electron device models, not limiting the discussion to compact models, but including physical, analytical and numerical models, to clearly identify areas that need further research and possible contact points between the different modeling domains. This workshop is designed for device process engineers (CMOS, SOI, BiCMOS, SiGe) who are interested in device modeling; ICs designers (RF/Analog/Mixed-Signal/SoC) and those starting in that area as well as device characterization, modeling and parameter extraction engineers. The content will be beneficial for anyone who needs to learn what is really behind the IC simulation in modern device models.
Topics: to be covered include the following:
  • Advances in semiconductor technologies and processing
  • Compact Modeling (CM) of the electron devices
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • FOSS TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, TFT CMOS and SOI-based memory cells
  • Organic, Bio/Med devices/technology modeling
  • Microwave, RF device modeling, HV/Power device modeling
  • Nanoscale CMOS devices and circuits
  • Technology R&D, DFY, DFT and IC Designs
  • Foundry/Fabless Interface Strategies
Invited talks tenatetive listing (alphabetic order)
Prof. Mansun Chan; Compact Models for Giga-Scale Memory System
Dr. Axel Huelsmann; mHEMT based MMICs, Modules, and Systems for mmWave Applications
Dr. Pete Zampardi; Understanding Gaps in III-V HBT Modeling and Simulation
Abstract Submission is open (any related enquiries can be sent to
Manuscript submission deadline: 28th May 2018 (Monday)
Notification of Acceptance: 4th June 2018 (Monday)
Submission of final manuscript: 11th June 2018 (Monday)

Extended MOS-AK Committee:
  • Honorary Committee
    • Yan Wang, Tsinghua University
  • Advisory Committee
    • George Ponchak, T-MTT Editor
    • Yuhua Cheng, PKU
  • Organizing Committee General Co-Chairs:
    • Yan Wang, Tsinghua University 
    • Wladek Grabinski, MOS-AK
  • International R&D Adviser
    • Min Zhang, XMOD Technologies
  • Finance Chair:
    • Li Zhang, Tsinghua University
  • Publication Chair:
    • Wladek Grabinski, MOS-AK
  • Awards Committee Chair:
    • Zhiping Yu, Stanford U
  • Sponsorship Chair:
    • Li Zhang, Tsinghua University
    • Min Zhang, XMOD
  • Exhibition Chair:
    • Jin Chen, SIMIT
    • Kai Lv, NUS
  • Local Arrangements Chair:
    • Wenfei Hu, Tsinghua University
  • Publicity:
    • Sen Yin,  Tsinghua  University
  • Workshop Secretary:
    • Li Zhang
    • Office: +86 010 62771733; Mobile: +86 138 01302877
    • Email:
  • Technical Committee
    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation
  • Co-Chair: Geoffrey Coram, Analog Devices
  • Co-Chair: Prof. Jamal Deen, U.McMaster
  • Co-Chair: Roberto Tinti, Agilent EEsof Division
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS; Brazil
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC; Brazil
  • Co-Chair: Sergio Bampi, UFRGS, Brazil
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS, Austria
  • Co-Chair: Suba Subramaniam, XFab, XFab, Germany
  • Co-Chair: Prof. Benjamin Iniguez, URV, Spain
  • Co-Chair: Franz Sischka, SisConsult, Germany
    MOS-AK/GSA Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: Min Zhang, XMOD Technologies, (CN)
  • Co-Chair: Xing Zhou, NTU Singapore (SG)  
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
update: March. 2018 (rev. a)
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