AKB Overview

AKB: BIPOLAR Working Group

AKB is a voluntary federation of modeling specialists of industrial companies, R&D institutes and universities. Goal of the AKB is the discussion and exchange of experience regarding all problems of active bipolar and passive devices compact/SPICE modelling.

AKB Group Meetings

Next AKB will be held in Munich between Nov.17-18, 2022

2021: Infineon, Munich (D) Nov.4-5 , 2021

T. Rosenbaum: "Agenda AKB 2021" and "Member Matters"

G. U’Ren: "Introduction X-FAB France"

M. Müller, P. Kuthe, M. Krattenmacher, M. Schröter "Overview of Free Software Packages for Compact Modeling"

D. Céli, Z. Huszka: "Parameter Extraction Using QucsStudio"

K-W. Pieper: "Finding root causes of convergence failures in circuit simulation"

T. Rosenbaum: "A look on characterization of semiconductor devices"

G. Fischer: "What’s the maximum tolerable current density for a SiGe HBT?"

C. Weimer and M. Schröter: "An Experimental approach to investigating device-level RF reliability"

F. Sischka: "Experiences with Using Gummel-Poon Models of Discrete Devices"

P. Popp, M. Cotorogea, D. Ludwig, G. Alia, A. Biswas: "Behavioral compact models of IGBTs and Si-diodes for data sheet simulations using a machine learning based calibration strategy"

X. Jin, G. Liang, and M. Schröter: "Characterization and modeling of thermal impedance for advanced SiGe HBT"

Z. Huszka: "Revisiting the Extraction of γC"

2019: STM, Crolles (F) Nov. 14-15, 2019

et al: Group Picture
T. Rosenbaum: "Agenda AKB 2019"
D. Céli: "STM Company Information"
T. Rosenbaum: "Member Matters"
R. Iskander, T. Gneiting: "Systematic Prediction and Prevention of all Types of Substrate Noise Coupling Effects"
Y. Li: "A Cognitive Software for Designing First-Time Right Analog IP"
K.-W- Pieper: "An Approach for Improving Circuit Convergence using HiSIM-HV as an Example"
K. Moln�r: "TSV Modeling from kHz to RF"
F. Sischka: "Experiences with Using the ASM-HEMT Model for III/IV HEMTs"
W. Grabinski: "FOSS TCAD/EDA Tools for Compact Modeling "
G. Fischer: "Low Frequency Noise in SiGe HBTs"
S.R. Panda, S. Fregonese, A. Chakravorty, T. Zimmer: "TCAD versus High Frequency Mesurements of SiGe HBTs "
M. M�ller, M. Schr�ter: "Selected Results of HiCUM Parameter Extraction for InP HBTS"
N. Derrier: "Breakdown Voltage and SOA for HBTs: a pragmatic approach for PDKs"
M. Jaoul, C. Maneux, T.Zimmer, D. Céli: "Breakdown Voltage, SOA and Aging of HBTs: A Physics Base approach for Compact modeling"
D. Céli: "Basic Principle of Model Parameter Extraction - Application to the Knee Current of SGP Model with QucsStudio"
Z. Huszka: "Parameter Extraction with QucsStudio_v2.5.7"
Z. Huszka: "A Solution to the Qp0 Issue in Hicum Parameter Extraction"

2018: AdMOS, Frickenhausen (D) Nov. 8-9, 2018

S. Locci: "Agenda AKB 2018"
S. Locci: "Member Matters"
T. Rosenbaum: "U-shaped junction capacitance modelling and proposal for diode CMC model enhancements"
C. Yadav, M. Deng, S. Fregonese, M. De Matos and T. Zimmer: "Measurement issues of on-Silicon de-embedding test structures in the Sub-THz range"
K.-W. Pieper, Y. Karafi: "Compact Model Parameter Extraction with Machine Learning Algorithms "
U. Sterr: "Pulse classification machine learning approach"
T. Gneiting: "Mittendrin in der Praxis der Rauschmessung"
C. Maier: "Power MOS Modeling For Commutation Cell Applications"
F. Sischka: "Impedance Measurements for Successful Device Modeling"
D: Céli , M. Jaoul, T. Zimmer: "Extension of HICUM/L2 Avalanche Model at High Current: Proposal"
Z. Huszka, M. Schr�ter: "Capacitance Splines for Arbitrary Doping Variations"
B. Ardouin: "RELIABILITY MODELING: a brief communication on theoretical issues and practical implementation difficulties in Verilog-A"

2017: XFab, Erfurt (D)

S. Locci: "Member Matters"

R. D'Esposito, S. Fregonese, S. Balanethiram, T. Zimmer: "Frequency analysis of the penetration depth of the heat flow in SiGe HBTs"

A. Biswas: "Next Level of IGBT Compact Model Implementation"

M. Cotorogea: "Virtual prototyping for power diode and IGBT development"

F. Sischka: "Transmission Line Pulse (TLP) Measurements and Simulations of Bipolar Transistor Snap-Back Effect"

T. Gneiting, H. Alius, F. Korndörfer, T. Mausolf: "Aging modeling of an LDMOS device using the new built-in age model of HiSIM HV 2.4."

C. Maier: "Experiences with Aging Simulation"

K.-W. Pieper: "Aging Simulation with variation of several model parameters"

B. Ardouin: "Practical Implementation of Reliability Aware Compact Models in Simulation Software Environment"

2016: Infineon, Munchen (D)

Agenda AKB 2016

J. Berkner: "Member Matters"

G. Panagopoulos: "pnp modelling in standard CMOS technologies"

Breandán Ó hAnnaidh: "Analog Devices in Ireland, celebrating 40 years of Advancing Technologies"

F. Sischka: "Tutorial About Applying Impedance Curve Modeling"

F. Sischka: "LED Impedance Modeling Examples"

A. Pawlak: "On the experimental determination of fmax"

F. Sischka: "Revue of Historic BJT Performances and Modelings"

T. Rosenbaum: "TCAD setup for an advanced SiGe HBT technology applied to the HS, MV and HV transistor versions"

E. Seebacher: "TCAD based variability modeling"

K.-W. Pieper: "A SPECTRE Sub-Circuit Model for Resistors including Self-Heating"

G. Fischer: "Temperature Dependence of the Relevant Sheet Resistances in SiGe Heterojunction Bipolar Transistors"

T. Zimmer: "BEOL-investigation on selfheating and SOA of SiGe HBT"

D. Céli: "Extraction of Parasitic Substrate PNP Parameters (and even more) of NPN Devices Without Access to the Substrate Terminal"

2015: AMS, Premstaetten (D)

"Agenda AKB 2015"

J. Berkner: "Member Matters"

W. Grabinski: "Qucs: Open Source Simulator"

K.-W. Pieper: "Diode_CMC model"

J. Berkner: "How to model the temperature dependence of a diode tunnel Current"

J. Wilhelmi: "Practical experience with thermal system Flex TC"

Z. Huszka: "Reducing the Computational Cost of HICUM/L2 at Invariant Node Count"

G. Fischer: "Analysis and Simulation of SiGe HBT Ageing"

A. Pawlak: "Advanced Modeling of Silicon-Germanium HBTs"

T. Rosenbaum: "Breakdown mechanisms in advanced SiGe HBTs: scaling and TCAD calibration"

H. Wald: "Integrated IGBTs: Challenges in Characterization and Modelling"

M. Willemsen: "Introduction to and overview of Mextram"

D. Céli: "Runtime Analysis of 4 VA HiCuM Versions with and without Internal Solver"

2014: STM, Crolles (D)

"Group picture"

"Agenda AKB 2014"

J. Berkner: "Member Matters"

T. Rosenbaum: "Automated Transit Time and Transfer Current Extraction"

F. Sischka: "Semiconductor Noise in the Time and Frequency Domain"

M. Tang: "Parasitic Bipolar Modelingfor Voltage Scalable MOSFET Transistors"

J. Berkner: "Bondwire Inductance Calculation and Measurement"

R. D'Esposito: "Investigation of transient intra-device thermal coupling"

A. Pawlak: "Status of HICUM/L2 Model"

D. Céli: "Investigation on Bias Dependence of Critical Current I_CK in HICUM Models"

N. Derrier: "Experience of BE Tunneling current and BC Barrier effect with HICUM L2 v2.32"

T. Rosenbaum: "Barrier modeling and extraction"

2013: IHP Frankfurt (O)

"Group picture"

"Agenda AKB 2013"

J. Berkner: "Member Matters"

A. Fox: "SiGe HBT Technology Development in the DOTSEVEN Project"

M. Elkhouly: "Determination of S-parameters in the 200-300 GHz range"

P. Braureis: "Deembedding of SiGe multifinger HBTs to 110 GHz - problems and solutions"

F. Korndörfer: "Simulation und Messung des thermischen Widerstandes von Silicium-Germanium- Hetero-Bipolartransistoren"

A. Pawlak: "Coupled extraction of RE and RTH based on DC output curves"

T. Zimmer: "Transistor's self-und mutual heating and its impact on circuit performance"

F. Sischka: "Experiences with Hicum0"

F. Stein: "Selected Topics in Bipolar Modeling and Measurement"

J. Wilhelmi: "Spice-extraction with included temperature parameters using SGP model"

2012: Infineon Technologies, Munich (D)

"Group picture"

"Welcome to the 25th Working Group Bipolar (AKB) 2012"

J. Berkner: "Member Matters"

G. Fischer: "Substrate Coupling for 500GHz HBTs"

B. Ardouin: "Dynamic Aging Modeling"

R. Lachner: "DOTSEVEN. Towards 0.7 THz SiGE"

M. Schr�ter: "Implementation of HICUM/L2 version 2.31"

W. Kraus: "Hicum Lessons learned or QA in Spectre"

J. Berkner, K.-W. Pieper: "What makes the difference? On model QA"

S. Locci: "How to make corner models for BJTs"

M. Weiss, T. Zimmer: "On pulsed RF measurements"

2011: Infineon Technologies, Munich (D)

"Group picture"

"Proceedings of the 24th Working Group Bipolar"

J. Berkner: "Member Matters"

A. Pawlak: "Introduction to the AKB forum"

B. Ardouin: "Review and Advances in Emitter Resistance Extraction Methods"

Z. Huszka: "Extraction of the diffusion voltage and the fixed part of junction capacitances"

P. Braureis: "Modeling of Infineon BFP740 using HICUM level 0v1.2 in QUCS 0.0.15"

G. Fischer: "HICUM/L2 Models for SiGe-HBTs in IHP 0.13�m BiCMOS Technology"

A. Bhattacharyya: "NQS modelling with HiCuM: What works, what doesn't"

N. Derrier: "Description of a SPICE Gummel-Poon Extraction Flow for Natural SubstratePNP transistors"

B. Senapati: "Characterization and Modeling of Lateral PNP Bipolar Transistor in CMOS Process"

J. Berkner: "Cold S-Parameter Measurements on Vertical PNP Transistors"

J. Bazzi: "On-Si calibration vs ISS calibration"

W. Kraus: "Software for Statistical Device Modeling: Use R"

K-W. Pieper: "Calculation of standard deviations and correlation coefficients for bipolar transistors"

2010: STM, Crolles (F)

"Group picture"

"Picture impressions"

J. Berkner: "Member Matters"

B. Ardouin: "XMOD TECHNOLOGIES - Company presentation"

T. Zimmer: "Impact of process variation on the circuit performance (RO / LNA)"

G. Fischer: "VBIC Models for High-Speed and High-Voltage HBTs in IHP‘s 0.13�m BiCMOS Technology"

J. Berkner: "What happens, if VBIC fails in Quasisaturation?"

B. Senapati: "Schottky-Barrier Diode Modeling Using VBIC"

Z. Huszka: "Revisiting the Charge Concept in HBT/BJT Models"

C. Céli: "How to Avoid HICUM/L2 v2.24"

A. Pawlak: "Application of HICUM/L2 v2.30 to advanced multi-100GHz SiGe HBTs"

J. Wilhelmi: "Darlington transistors Two ways of modelling"

P. Braureis: "On the feasability of single touch on wafer calibration using HBT (on wafer ECAL)"

N. Derrier: "Limitations of Bipolar Compact Models for LF Noise PART II –Answers to HICUM WS 2010 remarks"

2009: FHWS, W�rzburg (D)

"Photos from Conference"

"Member Matters"

G. Fischer: "Thermal Capacitance cth – its Determination and Influenceon Transistor and Circuit Performance"

P. Braureis: "Thermal impedance measurementand modeling including thermal coupling"

J. Wilhelmi: "Improvement of SGP modelling using additional devices"

C. Hanke: "Pulsed S-parameter measurements using ICCAP"

Z. Huszka: "Extraction of RE and its temperature dependence from RF measurements"

H. Wald: "Investigation of lateral PNP BiCMOS transistors for a special application in DVD PDICs"

D. Celi: "HICUM/L0 v1.2: Application to Millimeter Wave Devices"

J. Berkner: "Tips and Tricks for Daily Modeling Work"

2008: NXP Hamburg (D)

"Photos from Conference"

"Member Matters"

W. Riethm�ller: "NXP Overview"

D. R�sener: "A Brief Introduction"

D. Celi: "HICUM/L0 v1.2 Parameter Extraction and Validation"

N. Derrier: "HICUM L0 1.2 experience on various ST BiCMOS technologies"

J. Berkner: "Experience with Hicum L0 v1.2 (improved IFX version)"

Z. Huszka: "IGICCR Part II: Full HicumL2 Extraction Flow with Self Heating"

J. Berkner: "Proposal for modeling the barrier effect in the bipolar compact model Hicum L0"

B. Senapati: "Bipolar Modelling for ESD Circuits Design"

P. Braureis: "Probe Tip Characterization UsingSelf-Calibration"

M. Schr�ter: "I_T parameter extraction issues in HiCuM/L2 for very advanced HBTs"

2007: Infineon, Munich (D)

"Picture Impressions"

"Member Matters"

U. Schindel: "20 Jahre Bipolar Arbeitskreis"

J. Berkner: "About Models, Designers and Simulators"

H. Schmidt-Habich: "Infineon Company Overview"

D. Celi: "Investigation of New Bipolar Geometry Scaling Laws"

B. Senapati: "Measurement and Scalable Model for Parasitic PNP of HV PMOS"

M. Schr�ter: "HICUM - Productization and Support Update"

C. Thiele: "HICUM/L0: Improvement of the injection width description"

Z. Huszka: "Temperature Invariant Extraction of IS and VER"

G. Fischer: "Simulation of IB Degradation after Stress"

P. Baureis: "Avalanche Breakdown in GaInP/GaAs HBTs"

T. Zimmer: "Investigation of Gecontent in the BC transition region with respect to transit frequency"

J. Berkner: "Bandgap Reference Simulation Principles and Problems"

C. Sch�nbein: "Bandgap Reference Simulation/Measurement Comparison"

W. Kraus: "Statistical Simulations of Bandgap Circuits"

E. Gondro: "Statistical Simulation Methodologyfor a Smart Power Technology"

H. Wald: "Modelling of diffused resistors"

2006: X-FAB, Erfurt (D)

"Photos from Conference"

J. Berkner: "How to avoid negative slope in HL0 IC"

D. Celi: "About h_JEi Parameter Extraction"

F. Korndörfer: "Extraction of CTH with pulsed measurements"

W. Kraus: "PCM- and Physics-Based Statistical BJT Modeling"

J. Berkner: "Member Matters"

F. Pourchon: "BVCER simulations with HICUM"

R. Reuter: "Nearly fully automated extraction of VBIC models by optimization of special rf-goals"

B. Senapati: "Modelling of Parasitic PNP in CMOS Process"

C. Thiele: "Problems during the extraction of the HICUM/L0 model parameters IQFH and TFH"

T. Zimmer, P. Baureis, H. Beckrich, P.Y. Sulima: "HBT's thermal impedance measurement"

2005: Bosch, Reutlingen (D)

J. Berkner: "The apparent parasitic breakdown"

J. Berkner: "Deembedding Effects on Cold S-parameter Measurements"

A. Hammer: "VBIC 1.20 Benchmarking"

Z. Huszka: "Revisiting the Integral Charge Control Relation (ICCR)"

Ch. Maier: "Modeling of Parasitic Bipolars in n-DMOS Transistors"

M. Schr�ter: "HICUM/L0 - Extraction results and experience"

Ch. Wipf: "Modeling a parasitic vertical bipolar transistor"

2004: Atmel, Heilbronn (D)

Photos from Conference

J. Berkner: "Cleaning Calibration Substrates"

J. Berkner: "Current Tendencies in SiGe BiCMOS Technologies Developments"

Z. Huszka: "Method for the Determination of the Optimal Noise Parameters from SPICE Simulations"

W. Kraus: "Extraction Method for Thermal Resistance"

K.-W. Pieper: "Modeling Reverse Recovery Effect"

R. Reuter: "VBIC versus HICUM for high-GHz, high Power Applications"

R.F. Scholz: "Modellierung von 80 GHz PNPs mit VBIC"

2003: AMS Unterpremstatten (A)

J. Berkner: "Bildbericht mit Agenda"

E. Seebacher: "Vorstellung der AMS"

J. Berkner: "S-Parameter Measurements using HP8510"

J. Fellner: "Low Frequency Noise Measurement and Noise Modeling"

Z. Huszka: "Estimation of fmax by the Common Intercept Method"

J. Jongsma: "Using SiGe in a CMOS World"

W. Kraus: "2D-Widerstandssimulation mit Finiten Elementen"

G. Rappitsch: "VBIC - Simulator Implementation and Benchmarking"

R.F. Scholz: "S-Parameter Messungen bis 110GHz"

R.F. Scholz: "Simple Emitter and Collector Scaling Approach with VBIC for Low-cost SiGe:C HBT’s"

E. Seebacher: "CODESTAR Compact modelling of on-chip passive structures at high frequencies."

2002: Freescale, Munich (D)

Fotos von der Tagung: Bild 1 Bild 2 Bild 3 Bild 4 Bild 5 Bild 6

J. Berkner: "How to improve ICCAP’s ability to generate scalable bipolar compact models"

P. Brenner: "Test Structures and a new approach for fast and accurate extraction of specific NPN parameters"

W. Graudszus: "Probleme bei der Parameterextraktion an Raumladungskapazit�ten"

W. Kraus: "Kontaktwiderst�nde"

R. Reuter: "New Layout and Deembedding Technique based on Transmission"

J. Schmidt: "Current Gain in SiGe HBTs"

2001: IHP Frankfurt Oder (D)

IHP_Luftaufnahme

J. Berkner: "Erfahrungen_mit_HICUM"

M. Ernst: "Bipolar_Modellierung_bei_AMS"

H.B. Erzgr�ber: "Spiral_Iductors"

F. F�rnhammer: "IHP_Technologie"

W. Kraus: "Varaktormodellierung"

H.-M. Rein: "Simulating_Avalanche_Breakdown"

R. Reuter: "Bipolar_Modellierung_bei_Motorola"

2000: Infineon, M�nchen (D)

J. Berkner: "1/f-Noise BJT Measurements using a Low Noise Current Amplifier"

P. Brenner: "Fast Extraction of Area Specific Base-Pinch and "

Petzold: "Temperatur Transform"

"IFX_Wireless Systems Division"

1999: Philips, Hamburg (D)

P. Brenner: "Skalierbares Varaktormodell zur layoutabh�ngigen Simulation"

M. Gerstenberg: "Thermochuck Kalibrierung"

J. Berkner: "Messungen zur Verifizierung der Kalibrierung des NWA HP8510C"

1998: TEMIC, Heilbronn (D)

P. Brenner: "Vorstellung des Bipolar-Transistormodells SQ3"

J. Berkner: "VBIC Parameter Extraktion"

1997: ALCATEL, Stuttgart (D)

J. Berkner: "Emitter and Collector Resistance Determination"

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No.#15990

update: Nov. 2017 (rev. a)

Contents subject to change �1999-2017 All rights reserved. WG
Graphics � 2017 Oliver