Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
1st Asia/South Pacific MOS-AK Workshop

(virtual/online) FEB. 25-26, 2021
Open Directory
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Techical Program Promoters
Providing Online Meeing Platform
SSE Publication Partner
Publication Partner
Final Workshop Progam
Important Dates:
  • Call for Papers - Dec. 2020
  • 2nd Announcement - Jan. 2021
  • Final Workshop Program - Feb. 2021
  • MOS-AK Workshop - FEB. 25-26, 2021
    • Day 1 begins: 8:00 in Europe; 12:30 in India; 15:00 in China
    • Day 2 begins: 8:00 in Europe; 12:30 in India; 15:00 in China
Display Format: Citation Citation & Abstract
FEB.25 MOS-AK Workshop Day 1 Begins: 8:00 in Europe = 12:30 in India = 15:00 in China
[0]  MOS-AK Workshop Opening
Nilesh Pandey, Sheikh Aamir Ahsan, W.Grabinski
Session A Chair Usha Gogineni, ams AG, Hyderabad (IN)
[1]  New Insights in Low Frequency Noise Characteristics in PE-BJTs
Peijian Zhang and Ma Long
Science and Technology on Analog Integrated Circuit Laboratory; WHU (CN), Keysight Technologies (US)
[2]  Direct white noise characterization of short-channel MOSFETs
K. Ohmori and S. Amakawa
DeviceLab, Tsukuba (J)
[3]  SPICE Modeling of 2D-material based FETs with Schottky-barrier contacts
Sheikh Aamir Ahsan
Nanoelectronics Research and Development Group, NIT Srinagar, Jammu and Kashmir (IN)
[4]  Physics-based model of SiC MOSFETs including high voltage and current regions
Sourabh Khandelwal, Cristino Salcines, and Ingmar Kallfass
Macquarie University Sydney (AU), University of Stuttgart (D)
Session B Chair: Daniel Tomaszewski, IMiF, Warszaw (PL)
[5]  Compact Modeling for Gate-All-Around FET Technology
Avirup Dasgupta
IIT Roorkee (IN)
[6]  BSIM-HV: Advanced High Voltage MOSFET Compact Model
Harshit Agarwal
IIT Jodhpur (IN)
[7]  ASCENT+ Transnational Access for the nanoelectronics
Georgios Fagas
Tyndall (IE)
FEB.26 MOS-AK Workshop Day 2 Begins: 8:00 in Europe = 12:30 in India = 15:00 in China
Session C Chair: Sadayuki Yoshitomi, Kioxia (J)
[8]  eSim: An open source CAD software for circuit simulation
Kannan Moudgalya
IIT Bombay (IN)
[9]  A modular approach to next generation Qucs
Felix Salfelder and Mike Brinson
QUCS Team; Centre for Communications Technology, London Metropolitan University (UK)
[12]  Machine learning-based approach to model and analyze GaN power devices
Tian-Li Wu
National Yang Ming Chiao Tung University, Taiwan (TW)
[11]  TCAD-inspired compact modeling approach
Sung-Min Hong and Kwang-Woon Lee
Gwangju GIST (KR)
Session D Chair: Sheikh Aamir Ahsan, NIT Srinagar (IN)
[10]  An Innovative Technique for Ultrafast Carrier Dynamics and THz Conductivities of Semiconductor Nanomaterials
Praveen Kr. Saxena and Fanish Kr. Gupta
Tech Next Lab, Lucknow (IN)
[13]  Compact Modeling of 3D NAND Flash Memory for Diverse Unconventional Analog Applications
Shubham Sahay
IIT Kanpur (IN)
[14]  Steep Subthreshold Slope PN-Body Tied SOI-FET for Ultralow Power LSI, Sensor, and Neuromorphic Chip
Takayuki Mori and Jiro Ida
Kanazawa Institute of Technology, Nonoichi (J)
of MOS-AK A/SP Workshop
International MOS-AK Committee:
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Committee
    MOS-AK North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK South America
  • Chair: Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
  • Co-Chair: Roberto S. Murphy, INAOE (MX)
  • MOS-AK Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Sanjay Mane, XFab, (D)
  • Co-Chair: Thomas Gneiting, AdMOS, (D)
  • Co-Chair: Benjamin Iniguez, URV (SP)
  • MOS-AK Asia/South Pacific
  • Chair: Sadayuki Yoshitomi, Kioxia (J)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Kaikai Xu, UESTC, Chengdu (CN)    
update: Apr. 2021 (Rev.F)
Contents subject to change (C) 1999-2020 All rights reserved. WG