Abstract: 
After more than 40 years and a rather long trip to Europe SPICE3 comes back to Berkeley. The state of development of the simulator will be presented, with the latest improvements and fixes. The ngspice team has grown and now includes new developers that are preparing the next release of the simulator that will be announced in the presentation.

Abstract: 
SPICE without Verilog-A support is not SPICE anymore; the language has replaced the C level device interface and is the primary end user model interface in almost all commercial simulators. Here we look at the benefits and challenges of having a powerful domain specific modelling language in SPICE and how users can make most use of this functionality.

Abstract: 
A novel large-signal FET model, featuring dynamic trapping effects and self-heating, has been recently extended and applied to a variety of advanced GaN power transistors. The modeling flow is unique in that it identifies the coupling among electrical, thermal, and “hidden” low-frequency dynamical variables from measured large-signal waveform data obtained from a nonlinear vector network analyzer (NVNA) instrument. The identified model’s multi-variate constitutive relations are then represented by artificial neural networks, ANNs, for the maximum accuracy and generality of the model. The model can predict all the relevant large-signal performance figures of merit, even under extreme load conditions, including long-term memory effects such as drain-lag (or “knee walk-out”), so signficant in the GaN technologies. Excellent results are demonstrated for a wide range of characteristics, both linear and large-signal, for multiple types of GaN transistors from different manufacturers. The model is now natively implemented in the Keysight nonlinear circuit simulator, ADS, and the extraction portion of the flow in a module of Keysight IC-CAP modeling SW.

Abstract: 
We present Advanced Simulation Model for HEMTs (ASM-HEMT), a physics-based compact model for the emerging Gallium Nitride based HEMTs. A consistent analytical solution of Schrodinger's and Poisson's equations in the quantum well is developed and used to derive the core drain-current and charges in the model. Plethora of important real device effects like: self-heating, non-linear series resistance, short-channel effects, velocity saturation, channel-length modulation, DIBL, mobility degradation, temperature effects, trapping effects etc. are included in the model to represent a real device. ASM-HEMT also includes models for gate-current, flicker noise and thermal noise. Model shows excellent agreement with experimental data from various sources.