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OPEN
SOURCE TCAD/EDA FOR COMPACT MODELING Editors: Wladek Grabinski and Daniel Tomaszewski Publisher: Mark de Jongh [Mark.deJongh@springer-sbm.com] 1st Edition., 2014, Hardcover; ISBN: xxx-xx-xxx-nnnn-n www. springer-sbm.com |
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Table
of contents |
Preface |
[tbd] |
Introduction |
Wladek
Grabinski, GMC
Suisse and Daniel Tomaszewski, ITE Warsaw |
Chapter_1 |
Numerical Cogenda TCAD MOSFET Device Simulations Chen Shen and Ding Gong Tutorial to Genius Device Simulator
Physics of Device Simulation Numerical Method in Device Simulation Device simulation: A MOS example |
Chapter_2 | Semiconductor Device Simulation Using DEVSIM Juan E. Sanchez Introduction
BJT Physics BJT Simulation Conclusion and Future Work |
Chapter_3 | Device Level Parameter
Extraction Daniel Tomaszewski, Wladek Grabinski Introduction
Parameter extractors overview General optimization algorithms Profile1d: open source extractor Examples: Diode, MOSCAP, BJT, MOSFET, IC Subcircuit Summary Appendix: List Profile1d commands |
Chapter_4 |
Schematic entry and circuit simulation with Qucs Mike Brinson Introduction
The Qucs graphical user interface Basic principles of circuit schematic capture Qucs parameter sweep techniques Qucs small signal AC circuit and noise simulation Qucs transient simulation Qucs subcircuits Including SPICE netlists in Qucs schematic diagrams Qucs post-simulation data processing Summary |
Chapter_5 |
Qucs modeling and simulation of analog/RF devices and circuits Mike Brinson Introduction
Circuit and system modeling using macromodels Qucs equation-defined device models Qucs and QucsStudio compact model development with the ADMS Verilog-A model synthesizer/compiler QucsStudio implementation More RF examples From Qucs to QucsStudio: future directions in analog simulation and device modeling Summary |
Chapter_6 | Simulations of Digital IC Blocks Zia Abbas, Antonio Mastrandrea, Francesco Menichelli and Mauro Olivieri Basics on Nano-scale Digital CMOS Analysis: Propagation Delay and Static Power
Basic Ngspice Delay and Leakage Current Analysis Automated Delay Characterization of CMOS Standard Cells Automated Leakage Current Characterization In CMOS Standard Cells Additional Material |
Chapter_7 | Hybrid TCAD Circuit Simulations Paolo Nenzi and Marco Balucani The design and simulation of a p-i-n diode
Forward region of operation High frequency behavior of p-i-n diode Forward and reverse recovery |
Chapter_8 | TCAD-SPICE Mixed Mode Simulator Chen Shen and Ding Gong The basic circuit structure of LM124
SPICE parameter extraction with TCAD simulation The principle of mixed mode simulation 2D mixed mode simulation Conclusion |
Chapter_9 | Standardized
Data Exchange For Device Modeling Tools Franz Sischka General Requirements For A Data Format Standard
Most Common Measurement Data Formats For Device Modeling MDM (Measured Data Management) Format Summary |
Index | |
update Jan'18 | Contents subject to change ©2017 No.#9581 All rights reserved. WG |