Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
MOS-AK Workshop in DATE Timeframe
Dresden, March 18 2016
MOS-AK: Enabling Compact Modeling R&D Exchange
Calendar
Open Directory
Books
Mission
Committee
Sponsors and Technical MOS-AK Program Promoters
XFAB
CFAED
WIE
IEEE WIE (Swiss)
EDS
IEEE EDS
German Chapter
NEEDS
powered by nanoHUB.org
TU Dresden
Eurotraining
IJHSES
(publishing partner)
MOS-AK Technical Program
Important Dates:
Venue:
Center for Advancing Electronics Dresden (CFAED)
Technische Universität Dresden
Würzburger Str. 46
01187 Dresden
Germany
Free
Online Registration
Agenda
Display Format: Citation Citation & Abstract
9:00-12:00
Morning MOS-AK Session
Chair: Thomas Gneiting, AdMOS (D)
T_ 0
Intro: MOS-AK Association
W.Grabinski
MOS-AK
T_1
Compact Modeling at the CFAED
Martin Claus
CFAED
T_2
Qucs current and planned circuit simulation and device modelling developments; a review
Mike Brinson*, Richard Crozier**, Claudio Girardi***, Vadim Kuznetsov****, Clemens Novak,*****, Bastien Roucaries******, Felix Salfelder*******, Frans Schreuder*********, Guilherme Brondani Torri**********
*Centre for Communications Technology, London Metropolitan University, UK, **The University of Edinburgh, UK, ***Qucs Developer, **** Bauman Moscow Technical University, Russia, *****Qucs Developer, ******Laboratoire SATIE --- CNRS UMR 8929, Universite de Cergy-Pontoise, ENS Cachan, FR, *******Gnucap and Qucs Developer, ********Frans Schreuder, *********Qucs Developer.
T_3 
Open source compact modeling in organic electronics
Heinz-Olaf Müller
Plastic Logic Germany
T_4
Semi-Analytical Model for Leakage Current in Ultra-Short DG MOSFET Based on NEGF Formalism
F. Hosenfeld* **, M. Graef* **, F. Horst* **, B. Iniguez**, F. Lime**, A. Kloes*
*Competence Center for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany, **DEEEA, Universitat Rovira i Virgili, Tarragona, Spain
T_5
LOD effect modeling and implementation
Vladimir Stejskal, Jiri Slezak
ON Semiconductor
T_6  Compact modeling approaches for organic and oxide TFTs
Benjamin Iñiguez Nicolau
Universitat Rovira i Virgili, Tarragona, Spain
12:00-13:00
Lunch break (and Posters Presentation)
13:00-16:00
Afternoon MOS-AK Session
Chair: Benjamin Iñiguez Nicola, URV (SP)
T_7  Analytical transport model for non-ballistic CNTFETs at high gate voltage
Igor Bejenari and Martin Claus
CEDIC, CEA
T_8  Applications and compact models of chemofluidic active devices [video]
Andreas Voigt and Jörg Schreiter
TUD (D)
T_9  Modelling current filamentation during ESD events
Christoph Sohrmann*, Patrick Scharf*, Steffen Holland**
*Fraunhofer IIS/EAS (D), **NXP (D)
T_10  Modeling nonlinear contact resistances in staggered organic field-effect transistors
Axel Fischer1, Hilke Zündorf1, Ulrike Kraft2, Hagen Klauk2, Johannes Widmer1 and Karl Leo1
1 Institut für Angewandte Photophysik, Technische Universität Dresden
2 Max Planck Institute for Solid State Research
T_11  Different Strategies for Statistical Compact Modeling
Elmar Gondro*, Michael Pronath** and Marat Yakupov**
*Infineon, **MunEDA
16:00
End of MOS-AK Workshop

Extended MOS-AK Committee:
Committee
  • MOS-AK Organzation Committee
    • Martin Claus, CFAED, TU Dresden (D)
    • Sandra Bley, CFAED, TU Dresden (D)
    • Alexander Petr, XFab, (D)
    • Wladek Grabinski, MOS-AK (EU)
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Program Committee
    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Prof. Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
    MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Alexander Petr, XFab (D)
  • Co-Chair: Prof. Benjamin Iniguez, URV (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK/GSA Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Xing Zhou, NTU Singapore (SG)  
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
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