MOS-AK at MiPlaza, High Tech Campus Eindhoven

Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
MOS-AK Meeting
Friday, 4 April 2008 at MiPlaza, High Tech Campus Eindhoven

Sponsors of the MOS-AK Meeting

Technical Program Promoters

Agenda: Friday, 4 April 2008 at MiPlaza, High Tech Campus Eindhoven
Workshop Chair: Thomas Gneiting Technical Program Coordinator: W.Grabinski
Morning Session 9:00-11:00 Oral presentations 10:00-10:30 (coffee break)	Poster Session 11:30-12:00 Posters 12:00-13:00 (lunch)	Afternoon Session 13:00-16:00 Oral presentations 14:30-15:00 (coffee break)

Workshop Program

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Citation & Abstract

9:00

Workshop Opening and Welcome Note:

MiPlaza/Agilent/Cascade Partnership
Gerjan van de Walle (MiPlaza)

Status of the PSP model
G.D.J. Smit, A.J. Scholten, B.A. de Vries, and D.B.M. Klaassen (NXP-TSMC Research Centre)
X. Li, W. Wu, and G. Gildenblat (Arizona State University)

Scalable High-frequency Modeling with EKV3
Matthias Bucher (TUC), Antonios Bazigos (NTUA)

Versatile Simulator-independent MOSFET Extractor
Thomas Gneiting (AdMOS)

10:30-11:30

Live Demonstration in the Electronic Measurement Lab:

Fully automated wafer characterisation (S-parameters, IP3&compression and noise-figure)
A step by step guide to practical RF device measurements
G.Fisher (Cascade) and D.Bockstal (Agilent)

11:30-12:00

Poster Session:

12:00-13:00

Lunch:

13:00-16:00

Afternoon Session:

The GSA MS/RF Model Checklist
Thomas Moerth (austriamicrosystems) Roberto Tinti (Agilent Technologies)

Qucs: A GPL software package for circuit simulation, compact device modeling and circuit macromodeling from DC to RF and beyond
M. E. Brinson and S. Jahn (Qucs project development team)

Statistical Modeling of Leakage in Nano CMOS
Wieslaw Kuzmicz (PW)

A Unique System Concept to Improve the Accuracy of Wafer-Level Flicker-Noise Characterization
Andrej Rumiantsev, Stojan Kanev (SUSS MicroTec Test Systems GmbH)

RF Extraction Techniques for Series Resistances of MOSFETs
J. C. Tinoco and J.-P. Raskin (UCL)

Abstract:
Adequate modeling of MOS transistors in static and dynamic regimes needs a proper knowledge of the series extrinsic resistances. The classical methods relies on DC measurements to extract those. However, these I-V techniques cannot determine independently the source and drain resistances and neither the gate resistance. For that reason, several methods in RF based on the measurements of the scattering parameters (S-parameters) have been developed. In the present paper, we firstly compare those different RF extraction techniques and demonstrate the high sensitivity of those extraction methods to the S-parameters noise measurement. Simulated ideal and noisy as well as measured S-parameters for a partially depleted floating-body Silicon-on-Insulator (SOI) MOSFET with channel length of 0.13 µm are used. The main results indicate that when the different extraction procedures are applied to ideal S-parameters, the Lovelace, Torres-Torres and Raskin´s methods work properly to extract the correct series resistances. However, they are very sensitive to the S-parameters measurement noise, producing unacceptable extracted values. Smoothing techniques to reduce the measurement noise impact on the S-parameters have been tested. Lovelace and Torres-Torres methods do not show important improvement. In the case of Raskin´s method, improvements are clearly observed. On the other hand, the Bracale´s method demonstrates to be less sensitive to the noise but the extracted values were not satisfactory. This discrepancy can be explained by the mobility degradation due to the transversal electric field and the asymmetry of the device. A new extraction procedure which takes into account the mobility degradation is proposed in the present paper. This correction allows extracting the correct resistances when the transistor is well symmetric, whereas slight asymmetry (Cgs ? Cgd ? C) lead to difficulties to obtain adequately the independent values of the drain and source resistances. Simulation results using compact models, derived analytical expressions based on a lumped small-signal equivalent circuit as well as measured data are presented to draw conclusions and guidelines concerning the best use of each extraction technique in order to properly extract MOSFETs series resistances.

Large-signal measurements and the impact on transistor model improvement
Marc Vanden Bossche (NMDG NV)

Simple and Accurate Approach to Implement the Complex Trans-conductance in Time-Domain Simulators
M. Homayouni, D. Schreurs, and B. Nauwelaers (KUL)

16:00

End of the Workshop

MOS-AK presentations recommended for further publication

No.#22554

update: 12-April-08 (rev.e)