| Arbeitskreis Modellierung von Systemen und
Parameterextraktion Modeling of Systems and Parameter Extraction Working Group 2nd Sino MOS-AK Workshop Hangzhou June 29-30, 2017 |
MOS-AK: Enabling Compact Modeling R&D
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Important
Dates:
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| Venue: |
会议场所：杭州电子科技大学科技馆
Hangzhou Dianzi University; Science & Technology Museum |
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| MOS-AK Workshop Agenda | |
| 29.JUNE | 1st Day MOS-AK Workshop |
| 8:30-9:20 |
Workshop Check in |
| 9:30-9:35 |
Open Speech LingLing Sun HDU |
| 9:35-9:40 |
MOS-AK Review & Outlook Min Zhang; XMOD (CN) Wladek Grabinski; MOS-AK (EU) |
| 9:40-10:25 |
Latest improvements in modeling for GaN and GaAs
foundry processes with the support of ADS capabilities (invited talk) Eric Leclerc UMS |
| 10:25-10:45 |
A novel TRL calibration process Jiangtao Su Hangzhou Dianzi University |
| 10:45-11:05 | Tea break |
| 11:05-11:50 |
TFT compact model and applications (invited talk) Ling Li IME Chinese Academy |
| 11:50-12:00 |
Group photo |
| 12:00-13:30 |
Lunch |
| 13:30-14:15 |
Radiation Hardening of Memory Products (invited talk) Helmut Puchner Cypress Semiconductor |
| 14:15-14:40 |
Models for the Simulation of Single-Event Effects
in 28nm FDSOI Technology Chen Shen Cogenda |
| 14:40-15:05 |
TCAD Simulation of Total Ionization Dose Response
on DSOI nMOSFET Yang Huang IME Chinese Academy |
| 15:05-15:25 | Tea break |
| 15:25-15:50 |
Radar system design considerations - system
modeling findings Jana Krimmling Silicon Radar |
| 15:50-16:15 |
LDMOS Modeling Using the Dual Gate JFET model
JFETIDG Kejun Xia NXP Semiconductors |
| 16:15-16:40 |
Compact modeling based on machine learning DongShen MA Qinghua University |
| 17:00-19:00 |
Gala dinner |
| 30.JUNE |
2nd Day MOS-AK Workshop
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| 8:30-9:20 | Workshop Check in |
| 9:30-10:15 |
Beyond 100GHz: Device characterization for THz
applications (invited talk) Thomas Zimmer IMS-LAB |
| 10:15-10:40 |
A High Gain Ka-band GaAs LNA with 1.2dB Average
Noise Figure Xu Cheng THz Application R&D institute |
| 10:40-11:00 | Tea break |
| 11:00-11:45 |
A New Compact Model for FinFETs Accommodaing Inner Thermal Effects (invited talk) Jun Liu Hangzhou Dianzi University |
| 12:00-13:30 |
Lunch
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| 13:30-13:55 | Anew material desing and device simulation platform Kui Gong HZWTECH |
| 13:55-14:20 |
A scalable EEHEMT model for 0.25 μm GaAs pHEMT
foundry process Yongbo Chen HIWAFER |
| 14:20-14:45 |
Key improvement on SOI modeling for RF switch
application Sunny Zhang HHGRACE |
| 14:45-15:10 |
Status of Current Reliability Modeling Solutions Long Ma Keysight |
| 15:10-15:35 |
Tea Break |
| 15:35-16:00 |
FinFET Modeling and Simulation Dehuang Wu Synopsys, Inc |
| 16:00-16:25 |
Modified T Equivalent Circuit Model Scalable
Method JieQing Luo SIMIT |
| 16:25-16:30 |
Closing Speech Wladek Grabinski MOS-AK (EU) |
| End of the MOS-AK workshop |
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