Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
March 28-29, 2014 London
MOS-AK: Over Two Decades of Enabling Compact Modeling R&D Exchange
MOS-AK Workshop Sponsors
Agilent MOSIS
The MOSIS Services
Tanner EDA
London Metropolitan University
Technical MOS-AK Program Promoters
EDA Solutions
MOS-AK Workshop Program
London Metropolitan University
Graduate Centre
166-220 Holloway Road
London N7 8DB
  Worksho Agenda
Display Format: Citation Citation & Abstract
Open Registration
9:30-12:00 March 28, 2013; Morning Session
T_ 0
Welcome and MOS-AK Workshop Opening
W. Grabinski
MOS-AK Group (EU)
T_ 1
Wavelength dependent microwave devices based on metamaterial technology
Bal Virdee
London Metropolitan University (UK)
T_2 Development of Verilog-A models for silicon photonics devices and implementation in a standard EDA environment
Patrick Martin*, Fabien Gays*, Edouard Grellier** and Sylvie Menezo**
*Silicon Components Division, **Optronics Division, CEA, Leti (F)
Coffee Break
T_ 3
A New MOSFET Model for the Simulation of Circuits under Mechanical Stress
Heidrun Alius*, Horst Rempp**, Zili Yu** and Thomas Gneiting*
* AdMOS GmbH (D), **IMS Chips (D)
T_ 4
Modeling the channel charge and potential in quasi-ballistic nanoscale DG MOSFETs
A. Mangla*, J.-M. Sallese*, C. Sampedro**, F. Gamiz**, C. Enz*
*EPFL (CH), **Universidad de Granada (ES)
Lunch Break
March 28, 2013; Afternoon Session
T_ 5
The EPFL Junctionless FETs model
Farzan Jazaeri and Jean-Michel Sallese
T_ 6
On the modelisation of the main characteristics of SOI Hall cells by three-dimensional physical simulations
Maria-Alexandra Paun
University of Cambridge (UK)
T_ 7
Compact modelling of RF small-signal and noise performance with EKV3 MOS transistor model
M. Bucher, A. Antonopoulos
Electronic and Computer Engineering (ECE), TUC (GR)
Coffee Break
Modeling of GaN-based High Electron Mobility Transistors - A Cursory Note on Some Latest Developments
Brian Chen
Agilent (US)
Building a second generation Qucs GPL circuit simulator: package structure, simulation features and compact device modelling capabilities
1. Mike Brinson, 2 Richard Crozier, 3 Clemens Novak, 4 Bastien Roucaries, 5 Frans Schreuder, 6 Guilherme Brondani Torri.
1. Centre for Communications Technology, London Metropolitan University, UK, 2. The University of Edinburgh, UK, 2. 3. Qucs Developer, 4. Laboratoire SATIE – CNRS UMR 8929, Université de Cergy-Pontoise, ENS Cachan, France, 1. 5. Nikhef, Amsterdam, NL, 6. Qucs Developer.
March 28, 2013; Welcome Reception and Networking

Opening by Professor Dominic Palmer-Brown, Dean of Faculty of Life Sciences and Computing
March 29, 2013; Qucs GPL circuit simulation tutorial
Qucs presentation I + Q&A
Coffee Break
Qucs presentation II + Q&A
Closing Plenary
Wladek Grabinski, MOS-AK Group (EU)
March 29, 2013; End of the MOS-AK Workshop

Extended MOS-AK/GSA Committee:
  • Workshop Organizing Committee:
  • Prof. Bal Virdee, Londonmet, FIET MIEEE
  • Prof. Mike Brinson, Londonmet 
  • David Houssein, IET Community Relationship Manager
  • Wladek Grabinski, MOS-AK
    Technical Committee

    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation
  • Co-Chair: Geoffrey Coram, Analog Devices
  • Co-Chair: Prof. Jamal Deen, U.McMaster
  • Co-Chair: Roberto Tinti, Agilent EEsof Division
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS; Brazil
  • Co-Chair: Prof. Carlos Galup-Montor, UFSC; Brazil
  • Co-Chair: Sergio Bampi, UFRGS, Brazil
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS, Austria
  • Co-Chair: Alexander Petr, XFab, Germany
  • Co-Chair: Prof. Benjamin Iniguez, URV, Spain
    MOS-AK/GSA Asia/South Pacific
  • Chair: Sadayuki Yoshitomi, Toshiba
  • Co-Chair: Xing Zhou, NTU Singapore   
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi
update: April 2014 (rev. F)
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