Arbeitskreis Modellierung von Systemen und Parameterextraktion Modeling of Systems and Parameter Extraction Working Group 7th Sino MOS-AK Workshop in Nanjing (CN) August 11-13, 2023 (online/onsite) |
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MOS-AK Workshop in Nanjing (CN) August 11-13, 2023 | |
Important Date: |
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Venue: 会议场所: |
MOS-AK Workshop
(online/onsite) 南京邮电大学青春剧场 Xianlin Campus of Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Qixia District, Nanjing (CN) |
Online | Registration is open any related enquiries can be sent to registration@mos-ak.org Workshop Secretary: Jiayin Liu (NJUPT) Mobile: 025-85866164 |
MOS-AK Workshop Agenda |
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11th August | Training course |
9:00-11:30 |
Characterization and modeling for Vertical power MOSFETs Lixi Yan ILH of Stuttgart University (now at Robert Bosch GmbH) |
13:30-16:00 |
Characterization and modeling for Vertical power MOSFETs Lixi Yan ILH of Stuttgart University (now at Robert Bosch GmbH) |
12th August | MOS-AK Day 1 |
8:30-9:20 |
WORKCHOP CHECK IN |
9:30-9:35 |
Welcome MOS-AK Open Speech Yufeng Guo Nanjing University of Posts and Telecommunications |
9:35-9:40 |
MOS-AK Review & Outlook Min Zhang and Wladek Grabinski XMOD and MOS-AK |
9:40-10:25 |
The SOI MOSFET: Startling mechanisms in ultrathin body (invited talk) Sorin Cristoloveanu Institut Polytechnique de Grenoble |
10:25-10:45 |
InAlN/GaN High Efficiency MIS-HEMT for mobile compatible applications Jingshu Guo School of Microelectronics, Xidian University |
10:45-10:55 |
Tea Break |
10:55-11:40 |
Spinlib: Open model library for MRAM R&D (invited talk) You Wang Nanjing University of Aeronautics and Astronautics |
11:40-12:00 |
Research on Reliability Mechanism and Degradation Characterization Model for SiC Power MOSFETs Jiaxing Wei Southeast University |
12:00-12:15 |
Group photo (offline&online) |
12:15-13:30 |
Lunch |
13:30-14:15 |
Trends in the power Semiconductor devices (invited talk) Bo Zhang University of Electronic Science and Technology of China |
14:15-14:35 |
Characterization and Threshold Voltage Modeling of Bulk PMOSFETs Down to 10 mK for Cryogenic CMOS Design Hao Su Southern University of Science and Technology |
14:35-14:55 |
Evolution towards a modern TCAD simulator framework (invited talk) Yaxiong Liu Suzhou PFTN Semiconductor Co.,Ltd |
14:55:15:05 |
Tea Break |
15:05-15:50 |
Compact Modeling of High-Voltage Devices using BSIM-BULK HV Compact Model (invited talk) Harshit Agarwal Nano Devices and Application Lab, IIT Jodhpur |
15:50-16:10 |
One stop solution for Random Telegraph Noise, from test, model to simulation Wenchao Liu Primarius Technologies Co., Ltd |
16:10-16:55 |
Prediction or fitting: Criteria for validating instability models of MOS devices (invited talk) Jianfu Zhang Liverpool John Moores University |
16:55-17:15 |
Investigation of the Non-idea Effects to IM3 Spot Performance in GaN HEMTs Jinye Wang Hangzhou Dianzi University |
17:15-17:35 |
A Multiphysics Single Event Effect Modeling Method Based on Machine Learning for Semiconductor Devices Ting Xu Institute of Microelectronics of the Chinese Academy of Sciences |
17:35-17:55 |
Overview of SiGe and III-V Heterojunction Bipolar Transistor Compact Modeling with HICUM/L2 Xiaodi Jin TU Dresden, Germany |
18:30-20:00 |
Gala Dinner |
13th August | MOS-AK Day 2 |
8:30-9:20 |
WORKSHOP CHECK IN |
9:30-10:15 |
Unifying the Statistical Modeling of Charge Trapping in Time and Frequency Domain (invited talk) Gilson Wirth Universidade Federal do Rio Grande do Sul |
10:15-10:35 |
ANN-assisted Device Modeling Solutions Jiayuan Deng PathWave Software Solutions Keysight Technologies |
10:35-10:45 |
Tea Break |
10:45-11:30 |
Harmonic Enhancement of Terahertz GaN Planar Gunn oscillators Using Multiple Gates (invited talk) Ying Wang Northwestern Polytechnical University |
11:30-11:50 |
High performance AlN/GaN Fin-HEMTs on Si substrate with low Ohmic contact resistance Lingjie Qin Xidian University |
11:50-13:30 |
Lunch |
13:30-14:15 |
Physics-based model for RF GaN circuits optimization (invited talk) Yuehang Xu University of Electronic Science and Technology of China |
14:15-14:35 |
The Improvement of ASM GaN Model Applied to Multi-temperature Bias in AlGaN/GaN HEMT Devices Tianxiang Shi Tsinghua University |
14:35-15:20 |
Multi-physics field coupling simulation method for micro-nano electronic devices and circuits (invited talk) Wensheng Zhao Hangzhou Dianzi University |
15:20-15:30 |
Tea Break |
15:30-15:50 |
IBIS Modeling as a Pure Spice Sub-Circuit Model Pijun Liu Giga Design Automation Corporation |
15:50-16:10 |
An Improved Gate Current Model for RF GaN HEMTs Xuan Lin Empyrean Technology Co., Ltd |
16:10-16:55 |
Extraction of Charge Carrier Mobility for Organic Transistors (invited talk) Yong Xu Nanjing University of Posts and Telecommunications |
16:55-17:15 |
AI-enabled generic semiconductor device modeling enhancement techniques Jing Chen Nanjing University of Posts and Telecommunications |
17:15-17:25 |
HEMT device highly accurate linearity model (IM3 sweet spot accurate model) MOS-AK Rewarded Question |
17:25-17:35 |
MOS-AK 2024 Introduction MOS-AK 2024 Organizer |
17:35-17:40 |
Close Speech Min Zhang and Wladek Grabinski XMOD and MOS-AK Association |
End | of MOS-AK Workshop |
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IEEE Membership | |
International
R&D
Advisory Board |
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Larry Nagel,
Omega Enterprises Consulting (USA) |
Fellow Member |
Andrei
Vladimirescu, UCB (USA); ISEP (FR) |
Fellow Member |
MOS-AK
Compact Modeling TPC Chair |
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Wladek
Grabinski, MOS-AK (EU) |
Senior Member |
North America TPC: | |
Pekka Ojala, Exar (USA) | |
Geoffrey Coram, Analog Devices (USA) | Senior Member |
Jamal Deen, U.McMaster (CAN) |
Fellow Member |
Roberto Tinti, Keysight EEsof Division (USA) |
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open |
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South America TPC: |
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Gilson I Wirth, UFRGS (BR) |
Senior Memner |
Sergio Bampi, UFRGS (BR) |
Member |
Antonio Cerdeira Altuzarra, Cinvestav-IPN (MX) |
Senior Member |
Roberto S. Murphy, INAOE (MX) | Senior Member |
open | |
Europe TPC: | |
Ehrenfried Seebacher, ams AG (A) | . |
Thomas Gneiting, AdMOS (D) | |
Benjamin Iniguez, URV (SP) | Fellow Member |
Daniel Tomaszewski, IMiF Warsaw (PL) | Senior Member |
open | |
Asia/Pacific TPC: | |
Sadayuki Yoshitomi, Kioxia (J) | Member |
Rakesh Vaid, University of Jammu (IN) | Senior Member |
Min Zhang, XMOD, Shanghai (CN) | |
Yuehang Xu, UESTC Chengdu (CN) |
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Kaikai Xu, UESTC Chengdu (CN) | Senior Member |
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