Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
7th Sino MOS-AK Workshop in Nanjing (CN)
August 11-13, 2023 (online/onsite)
Open Directory
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Organizers
MOS-AK Media Cooperation
Media IJCS
MOS-AK Workshop in Nanjing (CN) August 11-13, 2023
Important Date:
  • Call for Papers : Jan 2023
  • 2nd Announcement - April 2023
  • Final Workshop Program - July 2023
  • 7th Sino MOS-AK Workshop -  Aug. 11-13, 2023 (online/onsite)
MOS-AK Workshop (online/onsite)
Xianlin Campus of Nanjing University of Posts and Telecommunications,
9 Wenyuan Road, Qixia District, Nanjing (CN)
Online Registration is open
any related enquiries can be sent to
Workshop Secretary: Jiayin Liu (NJUPT)
Mobile: 025-85866164

MOS-AK Workshop Agenda
11th August Training course
9:00-11:30 Characterization and modeling for Vertical power MOSFETs
Lixi Yan
ILH of Stuttgart University (now at Robert Bosch GmbH)
13:30-16:00 Characterization and modeling for Vertical power MOSFETs
Lixi Yan
ILH of Stuttgart University (now at Robert Bosch GmbH)
12th August MOS-AK Day 1
9:30-9:35 Welcome MOS-AK Open Speech
Yufeng Guo
Nanjing University of Posts and Telecommunications
9:35-9:40 MOS-AK Review & Outlook
Min Zhang and Wladek Grabinski
9:40-10:25 The SOI MOSFET: Startling mechanisms in ultrathin body (invited talk)
Sorin Cristoloveanu
Institut Polytechnique de Grenoble
10:25-10:45 InAlN/GaN High Efficiency MIS-HEMT for mobile compatible applications
Jingshu Guo
School of Microelectronics, Xidian University
10:45-10:55 Tea Break
10:55-11:40 Spinlib: Open model library for MRAM R&D (invited talk)
You Wang
Nanjing University of Aeronautics and Astronautics
11:40-12:00 Research on Reliability Mechanism and Degradation Characterization Model for SiC Power MOSFETs
Jiaxing Wei
Southeast University
12:00-12:15 Group photo (offline&online)
12:15-13:30 Lunch
13:30-14:15 Trends in the power Semiconductor devices (invited talk)
Bo Zhang
University of Electronic Science and Technology of China
14:15-14:35 Characterization and Threshold Voltage Modeling of Bulk PMOSFETs Down to 10 mK for Cryogenic CMOS Design
Hao Su
Southern University of Science and Technology
14:35-14:55 Evolution towards a modern TCAD simulator framework (invited talk)
Yaxiong Liu
Suzhou PFTN Semiconductor Co.,Ltd
14:55:15:05 Tea Break
15:05-15:50 Compact Modeling of High-Voltage Devices using BSIM-BULK HV Compact Model (invited talk)
Harshit Agarwal
Nano Devices and Application Lab, IIT Jodhpur
15:50-16:10 One stop solution for Random Telegraph Noise, from test, model to simulation
Wenchao Liu
Primarius Technologies Co., Ltd
16:10-16:55 Prediction or fitting: Criteria for validating instability models of MOS devices (invited talk)
Jianfu Zhang
Liverpool John Moores University
16:55-17:15 Investigation of the Non-idea Effects to IM3 Spot Performance in GaN HEMTs
Jinye Wang
Hangzhou Dianzi University
17:15-17:35 A Multiphysics Single Event Effect Modeling Method Based on Machine Learning for Semiconductor Devices
Ting Xu
Institute of Microelectronics of the Chinese Academy of Sciences
17:35-17:55 Overview of SiGe and III-V Heterojunction Bipolar Transistor Compact Modeling with HICUM/L2
Xiaodi Jin
TU Dresden, Germany
18:30-20:00 Gala Dinner
13th August MOS-AK Day 2
9:30-10:15 Unifying the Statistical Modeling of Charge Trapping in Time and Frequency Domain (invited talk)
Gilson Wirth
Universidade Federal do Rio Grande do Sul
10:15-10:35 ANN-assisted Device Modeling Solutions
Jiayuan Deng
PathWave Software Solutions Keysight Technologies
10:35-10:45 Tea Break
10:45-11:30 Harmonic Enhancement of Terahertz GaN Planar Gunn oscillators Using Multiple Gates (invited talk)
Ying Wang
Northwestern Polytechnical University
11:30-11:50 High performance AlN/GaN Fin-HEMTs on Si substrate with low Ohmic contact resistance
Lingjie Qin
Xidian University
11:50-13:30 Lunch
13:30-14:15 Physics-based model for RF GaN circuits optimization (invited talk)
Yuehang Xu
University of Electronic Science and Technology of China
14:15-14:35 The Improvement of ASM GaN Model Applied to Multi-temperature Bias in AlGaN/GaN HEMT Devices
Tianxiang Shi
Tsinghua University
14:35-15:20 Multi-physics field coupling simulation method for micro-nano electronic devices and circuits (invited talk)
Wensheng Zhao
Hangzhou Dianzi University
15:20-15:30 Tea Break
15:30-15:50 IBIS Modeling as a Pure Spice Sub-Circuit Model
Pijun Liu
Giga Design Automation Corporation
15:50-16:10 An Improved Gate Current Model for RF GaN HEMTs
Xuan Lin
Empyrean Technology Co., Ltd
16:10-16:55 Extraction of Charge Carrier Mobility for Organic Transistors (invited talk)
Yong Xu
Nanjing University of Posts and Telecommunications
16:55-17:15 AI-enabled generic semiconductor device modeling enhancement techniques
Jing Chen
Nanjing University of Posts and Telecommunications
17:15-17:25 HEMT device highly accurate linearity model (IM3 sweet spot accurate model)
MOS-AK Rewarded Question
17:25-17:35 MOS-AK 2024 Introduction
MOS-AK 2024 Organizer
17:35-17:40 Close Speech
Min Zhang and Wladek Grabinski
XMOD and MOS-AK Association
End of MOS-AK Workshop

International MOS-AK Compact Modeling Committee

IEEE Membership
International R&D Advisory Board

Larry Nagel, Omega Enterprises Consulting (USA)
Fellow Member
Andrei Vladimirescu, UCB (USA); ISEP (FR)
Fellow Member
MOS-AK Compact Modeling TPC Chair

Wladek Grabinski, MOS-AK (EU)
Senior Member
North America TPC:  
Pekka Ojala, Exar (USA)
Geoffrey Coram, Analog Devices (USA) Senior Member
Jamal Deen, U.McMaster (CAN)
Fellow Member
Roberto Tinti, Keysight EEsof Division (USA)


South America TPC:

Gilson I Wirth, UFRGS (BR)
Senior Memner
Sergio Bampi, UFRGS (BR)
Antonio Cerdeira Altuzarra, Cinvestav-IPN (MX)
Senior Member
Roberto S. Murphy, INAOE (MX) Senior Member
Europe TPC:
Ehrenfried Seebacher, ams AG (A) .
Thomas Gneiting, AdMOS (D)
Benjamin Iniguez, URV (SP) Fellow Member
Daniel Tomaszewski, IMiF Warsaw (PL) Senior Member
Asia/Pacific TPC:
Sadayuki Yoshitomi, Kioxia (J) Member
Rakesh Vaid, University of Jammu (IN)Senior Member
Min Zhang, XMOD, Shanghai (CN)
Kaikai Xu, UESTC Chengdu (CN) Senior Member
update: AUG.2023  (REV.F)
Contents subject to change (C)1999-2023 All rights reserved. WG