| Arbeitskreis Modellierung von Systemen und
Parameterextraktion Modeling of Systems and Parameter Extraction Working Group 1st Sino MOS-AK Workshop Shanghai June 26-28 2016 |
MOS-AK: Enabling Compact Modeling R&D
Exchange
| Calendar |
Open
Directory |
Books |
Mission |
Committee |
| Sponsors and Technical MOS-AK Program Promoters |
|
 |
| |
 |
|
 |
 |
 |
 |
 powered by nanoHUB.org |
 |
 Publishing Partner |
| Technical
Program of the International MOS-AK Workshop |
|
Important
Dates:
|
|
| Venu: | |
| Agenda and Workshop Topics | |
| JUNE 26 | MOS-AK Tutorial Day |
| 08:30-09:20 | Workshop
Check
in Floor 3, building 5, NO.865 Chang Ning Road, Shanghai |
| 09:30-11:30 | From DC to RF
measurements/characterization/modeling - DC, CV part Franz Sischka, Author of IC-CAP Modeling Handbook Sisconsult (D) |
| 11:30-13:00 | Lunch |
| 13:00-14:30 | From DC to RF
measurements/characterization/modeling - RF part Mostafa Emam Incize (B) |
| 14:30-15:00 | Tea Break |
| 15:00-16:30 | Noise measurement and
modeling Paulius Sakalas Institut fur Elektrotechnik und Elektronik (IEE), Technische Universitat Dresden (D) |
| JUNE 27 | First MOS-AK Workshop Day |
| 08:30-09:20 | Workshop
Check
in Floor 3, building 5, NO.865 Chang Ning Road, Shanghai |
| 09:30-09:35 | Opening Speech Xi Wang Shanghai Institute of Microsystem and Information Technology (SIMIT), (CN) |
| 09:35-09:40 | Why MOS-AK Shanghai Min Zhang; Shanghai International Micro-Tech Affiliation Center (SIMTAC) Wladek Grabinski; MOS-AK Association (EU) |
| 09:40-10:25 | FOSS Compact Model Verilog-A
standardization
(Invited) Wladek Grabinski MOS-AK Association (EU) |
| 10:25-10:50 | Modeling and Optimization of MOSFET unit
cell
for power application Yan Wang QingHua University, (CN) |
| 10:50-11:10 | Tea Break |
| 11:10-11:35 | ASM-HEMT Model for RF and Power Electronic
Applications Overview and Extraction Long Ma Keysight Technologies (USA) |
| 11:35-12:00 | Physics-Based Modeling for TID Effects Chen Shen Cogenda Co Ltd (Suzhou) |
| 12:00-12:10 | Group Photo |
| 12:10-13:30 | Lunch |
| 13:30-14:15 | Modeling issue related to ReRAM and
Junctionless
FETs (Invited) Zhiping Yu QingHua University, (CN) |
| 14:15-14:40 | Behavioral Model Analysis using
Simultaneous
Fundamental Load-pull and Source-pull Measurements Jiangtao Su Hangzhou Dianzi University, (CN) |
| 14:40-15:05 | DOMINO-A European Modeling Initiative for
Organic and Oxide TFT Thomas Gneiting ADMOS (D) |
| 15:05-15:25 | Tea Break |
| 15:25-15:50 | Large signal modeling of InP/InGaAs DHBT
with
0.5THz fmax Bin Niu Nanjing Electronic Devices Institute, (CN) |
| 15:50-16:15 | Wafer-Level Calibration & Verification
up to
750 GHz Sia Choon Beng Cascade Microtech Inc. (USA) |
| 16:15-16:40 | The failure mode and aging model of GaAs
devices Tianshu Zhou HiSilicon, (CN) |
| 17:00-19:00 | Gala Dinner |
| JUNE 28 | Second MOS-AK Workshop Day |
| 08:30-09:20 | Workshop Check in "Floor 3, building 5, NO.865 Chang Ning Road, Shanghai" |
| 09:30-10:15 | CMOS Reliability: from Device Physics to
Circuit
Aging Simulations_Invited_ Lining Zhang Hong Kong University of Science and Technology (HKUST), (HK) |
| 10:15-10:40 | Model of power InAlN/GaN HEMT for 3-D
Electrothermal Simulations Ales Chvala Slovak University of Technology in Bratislava (SK) |
| 10:40-11:00 | Tea Break |
| 11:00-11:25 | Direct Extend PSP for RF SOI Largesignal
Modeling: Model and Verification Liu Jun Hangzhou Dianzi University, (CN) |
| 11:25-11:50 | Large Signal Equivalent Circuit Modeling
of
AlGaN/GaN HEMTs Haiyan Lu Nanjing Electronic Devices Institute, (CN) |
| 12:00-13:30 | Lunch |
| 13:30-14:15 | Understanding RF CMOS compact modeling to
allow
accurate RF circuit design_Invited_ Bertrand Ardouin XMOD Technologies (F) |
| 14:15-14:40 | Surface-potential compact model for
amorphous-IGZO thin-film transistors Ling LI Institute of Microelectronics of Chinese Academy of Sciences, (CN) |
| 14:40-15:05 | Gate Delay Model in Logic Circuit under
NBTI
Effect Haixia Guo East China Normal University, (CN) |
| 15:05-15:25 | Tea Break |
| 15:25-15:50 | Nonlinear Modeling of Terahertz InP HEMTs
Hebei
Semiconductor Research Institute Guangwei Du Hebei Semiconductor Research Institute, (CN) |
| 15:50-16:15 | Noise Characterization, Modeling and Its
Impact
on Highly Scaled Designs from 0.1 Hz to MMW Yanfeng Li Platform Design Automation, Inc. (CN) |
| 16:15-16:40 | Research progress of SOI devices and
modeling in
SIMIT Jing Chen Shanghai Institute of Microsystem and Information Technology (SIMIT), (CN) |
| 16:40-16:50 | Closing Speech Teng Gao Shanghai International Micro-Tech Affiliation Center (SIMTAC), (CN) |
| 17:00 |
End of International MOS-AK Workshop in
Shanghai |
| Extended MOS-AK Committee: | |
| Committee |
|
|
|
|
|
Graphics © 2016 Oliver