Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Group Meeting
organized by W. Grabinski, Motorola
MIXDES, 20-21 June 2002, Wroclaw, Poland

AGENDA

		Plenary Session / Invited Paper
	B. Iniguez	Analytical SOI MOSFET Model Valid for Graded-Channel Devices
		Special Session: MOS Modeling and Modern Mixmode Design
	W. Grabinski	Welcome
	X. Zhou	Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits
	C. Lallement	High Level Description of Thermodynamical Effects in the EKV2.6 MOST Model
	M. Bucher	EKV 3.0: an analog design-oriented MOSFET model
	D. Foty	gm/Id-Based MOSFET Modeling and Modern Analog Design
		coffee break
	L. Lemaitre	Compact Device Modeling Using Verilog-A and ADMS
	A. Lord	Advanced Calibration Techniques for On-wafer Microwave Measurements and Characterisation
	E. Vandamme	Large-Signal Network Analyzer Measurements and their Use in Device Modelling
		Special Session: Interdisciplinary Design: Models and Methods
	J.-M. Sallese	Principles of the 1T Dynamic Access Memory Concept on SOI
	E. Seebacher	MOS Transistor Modeling for HV Processes
	T. Gneiting	A Unified Environment for MOS Modeling Inside Agilent's IC-CAP
		coffee break
	G. Wachutka	From Continuous Field Modeling to MEMS Macromodels
	W. Dabrowski	Multielectrode System for Imaging of Neuronal Activity in Live Retinal Tissues
	L. Golonka	Application of LTCC Ceramics in Microwaves
		Poster Session: SOI Device Modeling
	D. Tomaszewski	Consistent DC and AC Models of Non-fully Depleted SOI MOSFETs in Strong Inversion
		End of Sessions

update:28-June-02

Contents subject to change.©2002 All rights reserved. WG