The International 8th Sino MOS-AK Workshop in Xi'an, China, is dedicated to advanced electronic and photonic devices. MOS-AK modeling group has more than 20 years experience in enabling R&D exchange. With the aggressive scaling of CMOS technologies and constantly emerging diversified devices, accurate device modeling technique poses severe challenge to circuit and system designers, in particular for RF/MW/mmW/THz/Power/optics. With this background, the workshop aims to strengthen a network and discussion forum among experts in the field, provide a forum for the presentation and discussion of the leading-edge research and development results of analytical and compact modeling, characterization and simulation techniques for advanced devices, circuits and technologies. Modeling and validation technique of all solid-state devices, including, Si, III-V, power, nanoscale electronic structures and other related new devices are within the scope of the conference. The theme of MOS-AK is "Bridge of Process Technology and Integrated Circuits & Systems Design".

MOS-AK Xi'an Compact Modeling Workshop Agenda

To encourage timely reporting of the latest results and have better opportunities to expand papers for possible journal publications, prospective authors are invited to submit a 1-2 page extended abstract in English. The manuscript should emphasize original contributions and key findings, including figures. diagrams and results from both simulations and measurements. References should be clearly cited and up-to-date. If accepted, technical committee will review the manuscript and excellent paper will be recommended further publication in the renowned Journal. By submitting a manuscript, the authors promise that, if accepted, at least one of them will attend MOS-AK with full registration. The 20min oral presentation will be required for the workshop.