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The VerilogA Models for Circuit Simulation repository is a collection of compact models written in VerilogA with the purpose of simulation of stateoftheart electronic circuits: 
asmhemt.va bsim6.1.1.va bsimbulk106.va bsimbulk107.va bsimcmg.va bsimimg.va bsimsoi.va diode_cmc.va ekv26.va epfl_hemt.va 
fbhhbt2.3.va hicuml02.va hicuml2.va hisim2.va hisimhv.va hisimhv.va hisimsoi.va l_utsoi_102.va bjt504.va bjt504t.va 
bjt505.va bjt505t.va mosvar.va mvsg_cmc.va psp102.va psp103.va r2_cmc.va r2_et_cmc.va r3_cmc.va vbic_1p3.va 
The repository is maintaned by Dietmar Warning. Other compact/VerilogA models are also listed below: 
ACM  Advanced Compact MOSFET 
The ACM (Advanced Compact MOSFET) model is a chargebased physical model. All the largesignal characteristics (currents and charges) and the smallsignal parameters transconductances and transcapacitances are given by singlepiece expressions with infinite order of continuity for all regions of operation.  
Web 
http://eel.ufsc.br/~lci/acm/introduction.html 
Code 
http://eel.ufsc.br/~lci/acm/download.html 
VerilogA 
No 
Simulator 
other 
References 
[1] C. GalupMontoro and M. C. Schneider, MOSFET Modeling for Circuit Analysis and Design, World Scientific, Singapore, 2007. 
Angelov GaAs  industrystandard compact device model for GaAs transistors 
A general purpose largesignal modeling approach with the VerilogA implemented in CAD tools and experimentally evaluated. Models show good accuracy and stable behavior also for HB simulations.  
Web 
https://document.chalmers.se/workspaces/chalmers/mikroteknologioch/iltchoangelowdocuments/ openfolder 
Code 
http://www.tiburonda.com/design_kits/Angelov_DK_v1_12_OA.zip 
VerilogA 
Yes 
Simulator 
ADS 
References 
Ilcho Angelov, Roberto Tinti; Accurate Modeling of GaAs & GaN HEMT's for Nonlinear Applications; EDA Webcast, May 7 2013 
Angelov GaN  industrystandard compact device model for GaN transistors 
AngelovGaN is an industrystandard compact device model for GaN semiconductor devices. Since GaN devices typically operate at high power, it is important to be able to model thermal issues and their impacts on device characteristics. Prof. I. Angelov at Chalmers University of Technology developed his AngelovGaN model as an alternative.  
Web 

Code 
http://www.tiburonda.com/design_kits/Angelov_DK_v1_12_OA.zip 
VerilogA 
Yes 
Simulator 
ADS 
References 
Ilcho Angelov; Compact, Equivalent Circuit Models for GaN, SiC, GaAs and CMOS FET; MOSAK/GSA Workshop Dec.9, 2009 Baltimore 
BSIM6  Berkeley Shortchannel IGFET Model 
BSIM6 is the new Bulk MOSFET model from the BSIM Group. The model provides excellent accuracy compared to measured data in all regions of operation. It features model symmetry valued for analog and RF applications while maintaining the strong support and performance of the BSIM model valued for all applications since 1996. The model has been extensively tested by TechAmerica Compact Model Council (CMC) member companies to meet the needs of industrial users. CMC has approved the release of BSIM6.0.0 as an industrystandard MOSFET model.  
Web 
http://wwwdevice.eecs.berkeley.edu/bsim/?page=BSIM6 
Code 
http://wwwdevice.eecs.berkeley.edu/bsim/static.php?page=BSIM6_LR 
VerilogA 
Yes 
Simulator 
other 
References 
[1] Recent Enhancements in BSIM6 Bulk MOSFET Model; H.Agarwal (IIT Kanpur), S. Venugopalany, M.A. Chalkiadakia, N.Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, and P. Kushwaha, Y. S. Chauhan (IIT Kanpur), and C. Enz, A. Niknejd, and C. Hu; SISPAD 2013, Glasgow UK 
EKV 2.6  EKV Compact MOSFET Model Standard for Analog/RF IC Designs 
An analytical MOS transistor model valid in all regions of operation and dedicated to lowvoltage and lowcurrent applications  
Web 
http://ekv.epfl.ch 
Code 
https://github.com/ekv26/model 
VerilogA 
Yes 
Simulator 
ngspice, Qucs, GnuCap, Xyce 
References 
[1]
C. Enz, F. Krummenacher, E. Vittoz, 'An analytical MOS transistor model
valid in all regions of operation and dedicated to lowvoltage and
lowcurrent applications', Journal on Analog Integrated Circuits and
Signal Processing, Kluwer Academic Publishers, pp. 83114, July 1995 [2] M. Bucher, 'Analytical MOS Transistor Modelling for Analog Circuit Simulation', Ph.D. Thesis No. 2114 (1999), Swiss Federal Institute of Technology, Lausanne (EPFL). 
HICUM  HIgh CUrrent Model 
HICUM stands for HIgh CUrrent Model and targets the design of bipolar transistor circuits at highfrequencies and highcurrent densities using Si, SiGe or IIIV based processes. HICUM is being developed and maintained by the HICUM Group at CEDIC, University of Technology Dresden, Germany, and the University of California at San Diego, USA. Presently three hierarchy (levels) of HICUM models (e.g., Level0, Level2 and Level4) exist differing by model complexity and each targeting a different design purpose.  
Web 
http://www.iee.et.tudresden.de/iee/eb/hic_new/hic_intro.html 
Code 
http://www.iee.et.tudresden.de/iee/eb/hic_new/hic_source.html 
VerilogA 
Yes 
Simulator 
other 
References 
[1] M. SchrÃ¶ter, A. Chakravorty "Compact Hierarchical Bipolar Transistor Modeling with HiCUM" 752pp; Nov 2010 ISBN: 9789814273213 (hardcover) 
HiSIM2  SurfacePotentialBased RF MOSFET Model for Circuit Simulation 
Standardization of HiSIM2 and release of HiSIM251 as 1st standard version on April 2011ã€€  
Web 
http://www.hisim.hiroshimau.ac.jp/ 
Code 
http://home.hiroshimau.ac.jp/usdl/HiSIM2/HiSIM2_pub.html 
VerilogA 
Yes 
Simulator 
other 
References 
[1]
Mitiko MiuraMattausch; Hans JÃ¼rgen Mattausch; Tatsuya Ezaki; The
physics and modeling of MOSFETS: surfacepotential model HiSIM; New
Jersey; World Scientific, cop. 2008 [2] N. Sadachika, S. Mimura, A. Yumisaki, K. Johguchi, A. Kaya, M. MiuraMattausch, and H. J. Mattausch, "Prediction of CircuitPerformance Variations from Technology Variations for Reliable sub100nm SOC Circuit Design", IEICE Trans. on Electronics, Vol. E94C, No. 3, 361367 (2011.3) 
MEMS Switch  largesignal model for a ohmic cantilever RF MEMS switch 
The VerilogA large signal model can be used for operating point, small signal (AC, SP) and large signal (HB, PSS, QPSS) simulations, using ADS, SpectreRF or Qucs. It includes largesignal electromechanical effects, as well as smallsignal Brownian and JohnsonNyquist noise. It does not include electrothermal effects yet.  
Web 
http://wwwpersonal.umich.edu/~vcaeken 
Code 
http://www.designersguide.org/VerilogAMS/memsmodels/OHMIC_CANTILEVER_RF_MEMS_SWITCH.va 
VerilogA 
Yes 
Simulator 
other 
References 
[1] K. Van Caekenberghe, "Modeling RF MEMS Devices", IEEE Microwave Magazine, vol. 13, no. 1, pp. 83110, Jan.Feb. 2012 
MEXTRAM  compact model for bipolar transistors 
Mextram is a compact model for bipolar transistors: it supports the design of bipolar transistor circuits in silicon (Si) and silicongermanium (SiGe) based process technologies. Mextram is developed and supported at Delft University of Technology. Mextram has been selected by the Compact Model Council (CMC) as a world standard bipolar transistor compact model for the semiconductor industry.  
Web 
http://mextram.ewi.tudelft.nl/ 
Code 
http://mextram.ewi.tudelft.nl/page_Releases.504.php 
VerilogA 
Yes 
Simulator 
other 
References 
[1] "Mextram" by R. van der Toorn, J.C.J. Paasschens, W.J. Kloosterman and H.C. de Graaff; Chapter 7 (pp. 199  227) of: Compact Modeling, Principles, Techniques and Applications, Gildenblat, Gennady (ed.), Springer, NewYork, 2010. 
PSP  Compact Model for bulk MetalOxideSemiconductor Field Effect Transistors (MOSFET's) 
PSP is a surfacepotential based MOS Model, containing all relevant physical effects (mobility reduction, velocity saturation, DIBL, gate current, lateral doping gradient effects, STI stress, etc.) to model presentday and upcoming deepsubmicron bulk CMOS technologies. PSP not only gives an accurate description of currents, charges, and their first order derivatives (i.e. transconductance, conductance and capacitances), but also of the higher order derivatives, resulting in an accurate description of electrical distortion behavior. The latter is especially important for analog and RF circuit design. The model furthermore gives an accurate description of the noise behavior of MOSFETs. Finally, PSP has an option for simulation of nonquasistatic (NQS) effects.  
Web 
http://psp.ewi.tudelft.nl/ 
Code 
http://psp.ewi.tudelft.nl/page_Releases.103.php 
VerilogA 
Yes 
Simulator 
other 
References 
[1] SurfacePotentialBased Compact Model of Bulk MOSFET by Gennady Gildenblat, Weimin Wu, Xin Li, Ronald van Langevelde, Andries J. Scholten, Geert D.J. Smit and Dirk B.M. Klaassen. Chapter 1 (pp. 3  40) of: Compact Modeling, Principles, Techniques and Applications, Gildenblat, Gennady (ed.), Springer, NewYork, 2010. 
VBIC  Vertical Bipolar Intercompany Model 
VBIC is a bipolar junction transistor (BJT) model that was developed as a public domain replacement for the SPICE GummelPoon (SGP) model. VBIC is designed to be as similar as possible to the SGP model, yet overcomes its major deficiencies. VBIC improvements on SGP: Improved Early effect modeling; Quasisaturation modeling; Parasitic substrate transistor modeling; Parasitic fixed (oxide) capacitance modeling; Includes an avalanche multiplication model; Improved temperature modeling; Base current is decoupled from collector current; Electrothermal modeling; Smooth, continuous model.  
Web 
http://www.designersguide.org/VBIC/ 
Code 
http://www.designersguide.org/VBIC/downloads.html 
VerilogA 
Yes 
Simulator 
other 
References 
[1] Mcandrew, C.C.; Seitchik, J.A.; Bowers, Derek F.; Dunn, M.; Foisy, M.; Getreu, Ian; McSwain, M.; Moinian, S.; Parker, J.; Roulston, D.J.; Schroter, M.; Van Wijnen, P.; Wagner, L.F., "VBIC95, the vertical bipolar intercompany model," SolidState Circuits, IEEE Journal of , vol.31, no.10, pp.1476,1483, Oct 1996 





