MOS-AK 2009: 20 Years of Enabling Compact Modeling R&D Exchange

Arbeitskreis MOS-Modelle und Parameterextraktion MOS Modeling and Parameter Extraction Working Group MOS-AK Meeting

2-3 April 2009 at IHP in Frankfurt /Oder

 

3 April 2009
Morning Session 9:00-11:30 Oral presentations 11:30-12:00 Posters' briefing 12:00-13:00 Lunch	Afternoon Session 13:00-16:00 Oral presentations 15:45-16:00 Closing Remarks 16:00 End of the meeting

Sponsor and Technical Program Promoters

MOS-AK Posters' Briefing

Display Format: Citation Citation & Abstract
3 April'09
11:30-12:00	Posters' Briefing - Chair: Wladek Grabinski; GMC Suisse
P_1	Effect of a Local Ground and Probe Radiation on the Microwave Characterization of Integrated Inductors Behzad Rejaei and Ruben Zowada* TU Delft, *Cascade Microtech Abstract:  Microwave characterization of an integrated inductor is often carried out with respect to a local ground reference. The measurement outcome, however, does not necessarily reproduce the behavior of the device in an actual circuit where a ground reference does not exist. Furthermore, inductor measurements can be affected by the unequal currents on the inner and outer conductors of the coaxial lines internal to the RF probes. Such currents tend to radiate the microwave energy into the surroundings and manifest themselves as unexpected ripple and resonance features in measurement results. In this study, a measurement model is developed including both effects and is used to analyze experimental data obtained from integrated spiral inductors. A novel deembedding technique is then proposed and applied to eliminate the local ground and unequal coaxial current effects.
P_2	Applying Nonlinear RF Measurements to Device Modeling Franz Sischka Agilent-EEsof Abstract:  Nonlinear device characterization measurements provide calibrated, vector corrected wave forms of the device under test. Measurements such as amplitude and phase of harmonics, group delay, phase between the harmonics and vector corrected time domain waveforms can be made. Nonlinear component characterization measures the incident, transmitted and reflected waves of the DUT. This data can then be displayed in the frequency, time or power domain as well as in user defined ratios such as I/V to display dynamic loadlines. Additionally, this information can be imported into Agilent’s ADS simulator (describing the full device performance using X-Parameters) or into IC-CAP to for applying conventional models to nonlinear RF measurement data. A demo about how nonlinear RF measurements can be applied to device modeling in IC-CAP will be presented.
P_3	Innovative Software Technologies for Analog-Mixed-Mode IC Designs Sergey Sukharev AVOCAD Abstract:  What is the AVOCAD? The idea of complete integrated circuit simulation and verification is realized by industry's leaders on the basis of specially developed programs, which allow simulation of analog and analog-mixed-mode CMOS circuits with dimensions up to 1B transistors within economically acceptable terms (RAM requirements, CPU time, etc). The AVOCAD tools offer unique simulation method, which is implemented into its circuit simulation module. AVOCAD CAD system allows simulation and design of the circuits with dimension beyond a million transistors. Full cycle of IC development flow will be presented in this paper, with focus on the AVOSpice simulator as very accurate and at the same time very fast IC modeling program on transistor level. Verilog-A parser techniques will be presented.
P_4	ADMS - A Fully Customizable Compact Model Compiler Laurent Lemaitre Freescale, Suisse Abstract:  ADMS is a open code generator that converts electrical compact device models specified in high-level description language into ready-to-compile c code for the API of spice simulators. Based on transformations specified in xml language adms transforms Verilog-AMS code into other target languages.
P_5	Quantum effects in DG FETs Udit Monga and Tor A. Fjeldly UniK Abstract:  We present a quantum mechanical modeling framework in double-gate (DG) FETs. In case of subthreshold regime, the charge is neglected , thus decoupling quantum effects and electrostatics in the body. For above-threshold regime, we’ve solved the Poisson’s equation with quantum charge density. In case of DG MOSFET, we have solved 1D Schrodinger equation along gate-to-gate axis and for DG FinFET we have solved 2D Schrodinger equation to model the quantum effects.
P_6	High frequency compact noise modelling of Multi-Gate MOSFETs Antonio Lázaro*, Antonio Cerdeira**, Bogdan Nae*, Magali Estrada** and Benjamin Iñiguez* *Universitat Rovira i Virgili (Tarragona, Spain) **CINVESTAV (Mexico) Abstract:  We present techniques to develop compact models of the high-frequency noise in Multi-Gate MOSFETs. First of all, we use the active transmission line approach and we split the channel length into segments in each of which we consider a quasi-static small signal model with a local thermal noise source. In order to extend the model to nanoscale devices, the hydrodynamic transport and quantum confinement effects are considered. Finally, we apply a new approach to obtain compact expressions for the drain, gate current noise spectrum densities and theirs correlation for Double-Gate (DG) MOSFETs. These expressions depend on the mobile charge densities at drain and source, which are obtained using analytical expressions based on a unified charge control model. Using this model, the DG MOSFET noise performances are studied. Good agreement is observed between the segmentation model and the new analytical model, confirming the accuracy of the assumptions used.
12:00-13:00	Lunch

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update: March 16, 2009 (rev. g)

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