Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
13th International MOS-AK Workshop
Virtual/Online Brunch with the Experts
Silicon Valley, Dec. 10-11, 2020
Calendar
Open Directory
Books
Mission
Committee
MOS-AK: Enabling Compact Modeling R&D Exchange
MOS-AK Technical Program Promoters
THM Giessen
Sponsor and Online Host
SSE Journal
SSE Journal
Publishing Partner
Final MOS-AK Program
Important Dates:
  • Call for Papers - Oct. 2020
  • 2nd Announcement - Nov. 2020
  • Final Workshop Program - Dec. 2020
  • MOS-AK Workshop
    in timeframe of IEDM and Q4 CMC Meetings
    • virtual session 11:00 - 14:00 (PST) on Dec.10, 2020
    • virtual session 11:00 - 14:00 (PST) on Dec.11, 2020
Online Free Registration is open now; any related enquiries can be sent to registration@mos-ak.org
Agenda 
Display Format: Citation Citation & Abstract
Virtual MOS-AK session 11:00 - 14:00 (PST) on Dec.10, 2020
[0]  MOS-AK Opening
W.Grabinski
MOS-AK
[1]  Material Growth, Characterization of III-V & II-VI Compound Semiconductors and its Use for Various Device Applications
Saxena Praveen Kumar
Tech Next Lab Pvt Ltd
[2]  Contact-controlled transistors: Device characteristics and modelling challenges
Radu Sporea
Uni. Surrey (UK)
[3]  Contact-controlled transistors: Specific applications and opportunities
Eva Bestelink
Uni. Surrey (UK)
[4]  90 Years of Twoport Matrices and its Impact on Device Measurements and Modeling
Franz Sischka
SisConsult Engineering Office (D)
[5]  Some issues on the high-frequency compact modeling of CMOS transistors and related devices
Roberto Murphy
INAOE, Mexico
[6]  VAMPyRE: Verilog-A Model Pythonic Rule Enforcer
Geoffrey Coram
Analog Devices, Inc. (USA)
[7]  Simulate 40X Faster with SmartSpice HPP
Jody Matos
Silvaco (USA)
Virtual MOS-AK session 11:00 - 14:00 (PST) on Dec.11, 2020
[8]  Statistical Analysis of MOSFET extracted parameters for n-MOS mismatch modeling.
Juan Pablo Martinez Brito
CEITEC SA/UFRGS (BR)
[9]  Rapid multiscale simulation of nanoscale MOSFETs: Is an interplay between compact models and NEGF possible?
Alexander Kloes
NanoP, THM University of Applied Sciences (D)
[10]  The Effect of Non Rectangular MOS Channels in Modelling High Voltage Lateral MOS
Marco Sambi, Lorenzo Labate, Simona Cozzi, Nicola Holzer
STMicroelectronics (I)
[11]  Nonlinear Embedding Model for the Accelerated Design of PAs with the ASM-HEMT model
Patrick Roblin*, Miles Lindquist*, Nicholas Miller+ and Marek Mierzwinski^
*The Ohio State University, AFRL+, Keysight Corp.^ (USA)
[12]  New analytical model for AOSTFTs
Antonio Cerdeira, Yoanlys Hernandez-Barrios, Magali Estrada, Benjamin Iniguez
CINVESTAV (MX) and URV (SP)
[13]  Unifying the Modeling of Charge Trapping in RTN, 1/f Noise and BTI
Gilson Wirth
UFRGS (BR)
[14]  SPICE Modeling for Display Technologies
Bogdan Tudor
Silvaco (USA)
END of MOS-AK Virtual Workshop
 
International MOS-AK Committee:
Committee
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • MOS-AK Technical Committee
    MOS-AK/GSA North America
  • Chair: Pekka Ojala, Exar Corporation (USA)
  • Co-Chair: Geoffrey Coram, Analog Devices (USA)
  • Co-Chair: Prof. Jamal Deen, U.McMaster (CA)
  • Co-Chair: Roberto Tinti, Keysight EEsof Division (USA)
    MOS-AK/GSA South America
  • Chair: Prof. Gilson I Wirth; UFRGS (BR)
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC (BR)
  • Co-Chair: Sergio Bampi, UFRGS (BR)
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN (MX)
  • Co-Chair: Roberto S. Murphy, INAOE (MX)
  • MOS-AK/GSA Europe
  • Chair: Ehrenfried Seebacher, AMS (A)
  • Co-Chair: Sanjay Mane, XFab, (D)
  • Co-Chair: Prof. Benjamin Iniguez, URV (SP)
  • Co-Chair: Franz Sischka, SisConsult, (D)
    MOS-AK/GSA Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Kioxia (J)
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
  • Co-Chair: Min Zhang, XMOD Tech, Shanghai (CN)
  • Co-Chair: Kaikai Xu, UESTC Chengdu (CN)
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No.#1022
update: NOV.2020 (Rev.f)
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