Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
MOS-AK/GSA Workshop
April 8-9, 2010  Sapienza UniversitÓ di Roma
MOS-AK 2010: over 20 Years of Enabling Compact Modeling R&D Exchange
MOS-AK/GSA Workshop's Organizers and Sponsors
Sapienza_Uni_Roma CNIS
Agilent Micron Micron_Foundation
 Technical MOS-AK/GSA Program Promoters
EuroTraining MOSIS
The MOSIS Services
MOS-AK/GSA Publication Partners
Microelectronics Journal SSE ijnm_wiley
Final MOS-AK/GSA Rome Program
Register: Free on-line registration
Venue: The Faculty of Engineering, Sapienza UniversitÓ di Roma, Via Eudossiana 18, Rome
Recommended Hotels:
The hotels at the link below have an agreement with "La Sapienza";
Hotel Palatino
Other hotels (a short list):
Best Western Hotel Globus Rome
Hotel Felice in San Lorenzo area
Hotel Laurentia
12:00-13:00 April 9 - Poster Session - Chair: W.Grabinski
Display Format: Citation Citation & Abstract
P_1  Ultra Low Power Dual-Gate 6T and 8T Stack Forced CNFET SRAM Cells
Saravana Maruthamuthu
Infineon Technologies
P_2  Compact Modelling of a PCRAM Cell
Marina Reyboz, Olivier Rozeau, Luca Perniola, Giovanni Betti Beneventi
P_3  Model of Stress Induced Voiding in The Back-End-Of-Line Of A CMOS Process
Fernanda Irrera, Augusto Nascetti, Felice Russo, Massimo Sena
University La Sapienza of Roma (I) and MICRON Technology Italia
P_4  Modeling of Carbon Nanotube Field Effect Transistors oriented to SPICE software for A/D circuit design
Roberto Marani, Gennaro Gelao and Anna Gina Perri
Politecnico di Bari, Dipartimento di Elettrotecnica ed Elettronica, Laboratorio di Dispositivi Elettronici
P_5  First integration of MOSFET Band-To-Band-Tunneling current in BSIM4
F. Ramundo, P. Nenzi, M. Olivieri
Dipartimento di Ingegneria Elettronica - UniversitÓ di Roma "La Sapienza"
P_6  Influence of contact resistivity and temperature on Current trimming of Heavily doped Polysilicon resistors
Vladimir Strakos, Libor Vojkuvka, Radim Spetik
ONSemi, Czech Republic
P_7  Modeling of gate length dependent leakage in MOSFETs
Stanislav Banas
ONSemi, Czech Republic
P_8  Microwave and RF Semiconductor Devices Global Modeling Analysis
Giorgio Leuzzi and Vincenzo Stornelli
University of L'Aquila
P_9  Design Criteria Based On Floquet Eigenvectors For The Class Of LC-Tank Pulsed Bias Oscillators
Stefano Perticaroli, Fabrizio Palma
Sapienza UniversitÓ di Roma - Dipartimento di Ingegneria Elettronica
P_10  Detrapping Model For High-K Dielectrics
Rosario Rao and Fernanda Irrera
Electronic Department, "Sapienza" University of Rome
P_11  A New Automated Characterization Environment in IC-CAP
Roberto Tinti, Franz Sischka and Takashi Eguchi
Agilent Technologies
P_12  A 180nm High Voltage CMOS smart power technology
Ehrenfried Seebacher
P_13  RF Compact Models of Multilayer Graphene Nanoribbon and Multiwall Carbon Nanotube Interconnects
Maria Sabrina Sarto and Alessio Tamburrano
CNIS, Sapienza University of Rome
P_14  Reliability Simulation and Modeling
Mohamed Selim
Mentor Graphics
P_15  Modeling of SiP/SoC and Packaging for Signal Integrity
Emmanuel Leroux, Edoardo Genovese and Leonardo Sassi
  • Fernanda Irrera, Uni Roma; Technical Program Chair
  • Fabrizio FamÓ, Micron Technology Italia; Technical Program Co-Chair
  • Marco Balucani, Uni Roma; Technical Program Co-Chair
  • Paolo Nenzi, Uni Roma; Organization Coordinator
    Extended MOS-AK/GSA Committee:
  • Lisa Tafoya, Vice President, Global Semiconductor Alliance (GSA)
  • Chelsea Boone GSA; Senior Research Analyst
  • Wladek Grabinski, GMC Suisse; MOS-AK/GSA Group Manager
    MOS-AK/GSA North America:
  • Chair: Pekka Ojala, Exar Corporation
  • Co-Chair: Geoffrey Coram, Analog Devices
  • Co-Chair: Prof. Jamal Deen, U.McMaster
    MOS-AK/GSA South America:
  • Chair: Prof. Gilson I Wirth; UFRGS; Brazil
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC; Brazil
    MOS-AK/GSA Europe:
  • Chair: Ehrenfried Seebacher, austriamicrosystems AG
  • Co-Chair: Sebastian Schmidt, XFab
  • Co-Chair: Prof. Benjamin Iniguez, URV
    MOS-AK/GSA Asia/Pacific:
  • Chair: Goichi Yokomizo, STARC, Japan
  • Co-Chair: Sadayuki Yoshitomi, Toshiba, Japan
  • Co-Chair: Xing Zhou, NTU, Singapore
update: APR. 2010 (rev.c)
Contents subject to change ę1999-2010 All rights reserved. WG
Graphics ę 2010 Oliver