Arbeitskreis
MOS-Modelle und Parameterextraktion MOS Modeling and Parameter Extraction Working Group MOS-AK/GSA Workshop April 8-9, 2010 Sapienza Università di Roma |
MOS-AK/GSA Workshop's Organizers and Sponsors |
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Technical MOS-AK/GSA Program Promoters |
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![]() The MOSIS Services |
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MOS-AK/GSA Publication Partners |
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Final MOS-AK/GSA Rome Program |
Register: | Free on-line registration | |||||
Venue: | The Faculty of
Engineering, Sapienza Università di Roma, Via Eudossiana 18, Rome Recommended Hotels: The
hotels at the link below have an agreement with "La Sapienza";
Other hotels (a short list):http://www.uniroma1.it/organizzazione/postaeservizi/servizipersonale/risorse/default.php Hotel Palatino http://www.hotelpalatino.com/ Best
Western Hotel Globus Rome http://www.globushotelrome.it/
Hotel Felice in San Lorenzo area http://www.hotelfelice.com/en/home.html Hotel Laurentia http://www.hotellaurentia.com/ |
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12:00-13:00 | April 9 - Poster Session - Chair: W.Grabinski | |||||
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P_1 |
Ultra Low Power Dual-Gate 6T and 8T
Stack Forced CNFET SRAM Cells Saravana Maruthamuthu Infineon Technologies |
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P_2 |
Compact Modelling of a PCRAM Cell Marina Reyboz, Olivier Rozeau, Luca Perniola, Giovanni Betti Beneventi CEA, LETI-MINATEC |
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P_3 |
Model of Stress Induced Voiding in
The Back-End-Of-Line Of A CMOS Process Fernanda Irrera, Augusto Nascetti, Felice Russo, Massimo Sena University La Sapienza of Roma (I) and MICRON Technology Italia |
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P_4 |
Modeling of Carbon Nanotube Field
Effect Transistors oriented to SPICE software for A/D circuit design Roberto Marani, Gennaro Gelao and Anna Gina Perri Politecnico di Bari, Dipartimento di Elettrotecnica ed Elettronica, Laboratorio di Dispositivi Elettronici |
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P_5 |
First integration of MOSFET
Band-To-Band-Tunneling current in BSIM4 F. Ramundo, P. Nenzi, M. Olivieri Dipartimento di Ingegneria Elettronica - Università di Roma "La Sapienza" |
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P_6 |
Influence of contact resistivity and
temperature on Current trimming of Heavily doped Polysilicon resistors Vladimir Strakos, Libor Vojkuvka, Radim Spetik ONSemi, Czech Republic |
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P_7 |
Modeling of gate length dependent
leakage in MOSFETs Stanislav Banas ONSemi, Czech Republic |
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P_8 |
Microwave and RF Semiconductor
Devices Global Modeling Analysis Giorgio Leuzzi and Vincenzo Stornelli University of L'Aquila |
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P_9 |
Design Criteria Based On Floquet
Eigenvectors For The Class Of LC-Tank Pulsed Bias Oscillators Stefano Perticaroli, Fabrizio Palma Sapienza Università di Roma - Dipartimento di Ingegneria Elettronica |
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P_10 |
Detrapping Model For High-K
Dielectrics Rosario Rao and Fernanda Irrera Electronic Department, "Sapienza" University of Rome |
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P_11 |
A New Automated Characterization
Environment in IC-CAP Roberto Tinti, Franz Sischka and Takashi Eguchi Agilent Technologies |
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P_12 |
A 180nm High Voltage CMOS smart
power technology Ehrenfried Seebacher austriamicrosystems |
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P_13 |
RF Compact Models of Multilayer
Graphene Nanoribbon and Multiwall Carbon Nanotube Interconnects Maria Sabrina Sarto and Alessio Tamburrano CNIS, Sapienza University of Rome |
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P_14 |
Reliability Simulation and Modeling Mohamed Selim Mentor Graphics |
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P_15 |
Modeling of SiP/SoC and Packaging
for Signal Integrity Emmanuel Leroux, Edoardo Genovese and Leonardo Sassi CST AG |
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Committee: |
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