Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
Spring MOS-AK Workshop at DATE
Lausanne, March 31, 2017
Calendar
Open Directory
Books
Mission
Committee
MOS-AK: Enabling Compact Modeling R&D Exchange
Technical MOS-AK Program Promoters
MPI Corporation
Lead Sponsor
IEEE Switzerland
Swiss Section Sponsor
WiE
WIE Switzerland
NEEDS
powered by nanoHUB.org
FOSSEE
Eurotraining
IJHSES
Publishing Partner
Final MOS-AK Workshop Program
Important Dates:
  • Call for Papers - Dec. 2016
  • 2nd Announcement - Jan. 2016
  • Final Workshop Program - Feb. 2016
  • MOS-AK Workshop - March 31, 2017
Venue:
Swisstech Convention Centre
Quartier Nord de l'EPFL
Route Louis-Favre 2
CH-1024 Ecublens
Online:  Registration
Agenda 
Display Format: Citation Citation & Abstract
9:00-12:00
MOS-AK Morning Session
T_1  MOS-AK Intro
Jean-Michel Sallese and W.Grabinski
EPFL (CH), MOS-AK (EU)
T_2  ASCENT (Nanoelectronics Network) - Open Access to 14nm PDKs
Jim Greer
Tyndall National Institute (IRL)
T_3  The first stable release of Qucs-S and advances in XSPICE model synthesis
Mike Brinson*, Vadim Kuznetsov**
* Centre for Communications Technology, London Metropolitan University, UK, ** Bauman Moscow Technical University, Russia,
T_4  Interactive tool for quick calculation of design oriented MOSFET parameters
Anurag Mangla
ams AG (AT)
10:30-11:00 Coffee Break
T_5  Optimal geometry selection for Hall sensors integrated in CMOS technological process
Maria-Alexandra Paun
EPFL (CH)
T_6  Verilog-A model for ferroelectrics in organic electronics
Heinz-Olaf Müller* and Andreas Pawlak**
*Plastic Logic Germany, 01109 Dresden, Germany, **Chair for Electron Devices and Integrated Circuits, Technische Universität Dresden, 01062 Germany
T_7  Compact Modeling of the Organic TFT Devices
Benjaming Iniguez
URV (CAT)
12:00-13:00
Lunch Break
13:00-17:00
MOS-AK Afternoon Session
T_8  New Approach to Reduce Time-to-data when Characterizing Advanced Semiconductor Devices
Andrej Rumiantsev
MPI Corp. (TW)
T_9  Physics-based Modeling of Nano-Devices: Requirements and Examples
Mathieu Luisier*, Reto Rhyner**, and Aron Szabo*
*ETH Zurich (CH), **Synopsys Switzerland LLC (CH)
T_10  Semiconductor Device Compact Modelling with Ageing Effects
Felix Salfelder
University of Leeds (UK)
14:30-15:00
Coffee Break
T_11  Unified charge-based Transistor Model including Degradation Mechanisms
Theodor Hillebrand, Steffen Paul, Dagmar Peters-Drolshagen
University of Bremen (D)
T_12  Design trade-off between remote power and data communication for remotely powered sensor networks
Catherine Dehollain
EPFL, RFIC Group (CH)
T_13  Bio/Nano/CMOS interfaces for Ultrasensitive Memristive Biosensors
Sandro Carrara
EPFL (CH)
T_14  The EKV3 for Advanced Analog/RF IC Applications
Matthias Bucher
TUC (GR)
17:00
End of the MOS-AK Workshop

Extended MOS-AK Committee:
Committee
  • Local MOS-AK Organization Chair
    • Jean-Michel Sallese, EPFL (CH)
  • MOS-AK Workshop Manager
    • Wladek Grabinski, MOS-AK (EU)
  • International MOS-AK Board of R&D Advisers
    • Larry Nagel, Omega Enterprises Consulting (USA)
    • Andrei Vladimirescu, UCB (USA); ISEP (FR)
  • Technical Program Committee
    MOS-AK North America
  • Chair: Pekka Ojala, Exar Corporation
  • Co-Chair: Geoffrey Coram, Analog Devices
  • Co-Chair: Prof. Jamal Deen, U.McMaster
  • Co-Chair: Roberto Tinti, Keysight EEsof Division
    MOS-AK South America
  • Chair: Prof. Gilson I Wirth; UFRGS; Brazil
  • Co-Chair: Prof. Carlos Galup-Montoro, UFSC; Brazil
  • Co-Chair: Sergio Bampi, UFRGS, Brazil
  • Co-Chair: Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK Europe
  • Chair: Ehrenfried Seebacher, AMS, Austria
  • Co-Chair: Alexander Petr, XFab, Germany
  • Co-Chair: Prof. Benjamin Iniguez, URV, Spain
  • Co-Chair: Franz Sischka, SisConsult, Germany
    MOS-AK Asia/South Pacific

  • Chair: Sadayuki Yoshitomi, Toshiba (J)
  • Co-Chair: Min Zhang, XMOD Technologies, (CN)
  • Co-Chair: Xing Zhou, NTU Singapore (SG)  
  • Co-Chair: A.B. Bhattacharyya, JIIT New Delhi (IN)
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No.#1720
update: Feb. 2017 (rev. f)
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