Arbeitskreis MOS-Modelle und Parameterextraktion
MOS Modeling and Parameter Extraction Working Group
MOS-AK/GSA Workshop
7-8 April 2011  Paris
MOS-AK: Over Two Decades of Enabling Compact Modeling R&D Exchange
  MOS-AK/GSA Workshop Organizers and Sponsors
LIP6 CRNS UMPC
  Technical MOS-AK/GSA Program Promoters
GSA COMON EC Project EuroTraining MOSIS
The MOSIS Services
Technical MOS-AK/GSA Program
Venue: Université Pierre et Marie Curie (UPMC)
LIP6
4 Place Jussieu; Paris
Bâtiment ESCLANGON Amphithéâtre ASTIER
Agenda:
  • 7-8 April 2011
    • MOS-AK/GSA Workshop
    • "Frontiers of the Compact Modeling for Advanced Analog/RF Applications"
  • April 7 (13:00-17:00)
    • half day/afternoon MOS-AK modeling session
    • poster session introduction
    • COMON Network meeting/session (members only)
    • informal MOS-AK/COMON "modeling" dinner (individual selfpaid)
  • April 8 (9:00-17:00)
    • morning MOS-AK Session
    • poster session
    • afternoon MOS-AK Session
Display Format: Citation Citation & Abstract
13:00 - 16:00 April 7: Afternoon Session HVMOS Modeling

Welcome
Marie-Minerve Louerat and Wladek Grabinski
T_1  Extraction of a Scalable Electrical Model for a HV (600/800V) MOS Transistor
Simona Cozzi, Lorenzo Labate, and Roberto Stella
STMicroelectronics (ITA)
T_2  Aging model for a 40 V Nch MOS, based on an innovative approach
Filippo Alagi, Roberto Stella, Emanuele Viganó
ST Microelectronics, Cornaredo (MI), Italy
14:00 - 14:30 Coffee break
T_3  Modeling of High Performance HV MOSFET Transistors in a 40nm Technology Node
Rainer Herberholz, Yoan Dupret, Sunil Chitrashekaraiah, David Riedner, Seán Minehane, David Vigar and Mark Redford¹, Thomas Gneiting and Simon Knecht²
¹CSR, Advanced Process Technology Development (APTD) ²AdMOS GmbH, Advanced Modeling Solutions
T_4  I-V and C-V Results of the EPFL-High Voltage MOSFET Model (EPFL-HVMOS)
Antonios Bazigos, François Krummenacher, Jean Michel Sallese
EPFL
15:30 -16:00 Poster Introduction Session
 9:00 - 12:00
April 8: Morning Session: TCAD/CAD Simulations
T_5  Hierarchical Sizing and Biasing of Analog Firm Intellectual Properties
Ramy Iskander and Marie-Minerve Louerat
UPMC, LIP6 (F)
T_6  Qucs, SPICE and Modelica equation-defined modelling techniques for the construction of compact device models based on a common model template structure
M.E. Brinson*, S. Jahn**, H. Nabijou*
*Centre for Communications Technology, London Metropolitan University (UK), ** Qucs Project Manager, Munich (D)
10:00-10:30 Coffee Break
T_7  A novel PSS analysis implementation reusing the TRAN analysis of Ngspice circuit simulator
Stefano Perticaroli and Fabrizio Palma
Sapienza Università di Roma - Dept. of Information Engineering, Electronics and Telecommunications - DIET (I)
T_8  Tunnel FET: Present Status and Future Perspectives
Costin Anghel
ISEP (F)
11:30 - 12:00 Poster Session
12:00 - 14:00 Lunch Break
14:00 - 17:00 April 8: Afternoon Session: Advanced Compact Modeling
T_9  Physics-based compact model for ultimate FinFETs
Ashkhen Yesayan*, Nicolas Chevillon*, Fabien Prégaldiny*, Morgan Madec*, Christophe Lallement* and Jean-Michel Sallese**
*InESS Université de Strasbourg/CNRS (F), **EPFL (CH)
T_10  Small- and Large-Signal Modeling for Submicron InP/InGaAs DHBT's
Tom Johansen* and Virginie Nodjiadjim** and Jean-Yves Dupuy** and Agnieszka Konczykowska**
*DTU (DK), **III-V Lab (F)
T_11  Modeling Intermodulation Distortion in HEMT and LDMOS Devices Using a New Empirical Non-Linear Compact Model
Toufik Sadi* and Frank Schwierz*
*TU Ilmenau, Department of Solid-State Electronics (D)

Coffee Break
T_12  Non Quasi Static effect (NQS) modeling in compact transistor models
A. Bhattacharyya, C. Maneux, S. Fregonese, T. ZIMMER
IMS, Université de Bordeaux (F)
T_13  Investigation of De-embedding procedures up to 110GHz
J. Bazzi, A. Curutchet, F. Pourchon, N. Derrier, D. Celi, T. Zimmer
IMS, Université de Bordeaux (F)
17:00 End of the MOS-AK/GSA Workshop
Committees: Local Organizing Committee:
  • Marie-Minerve Louerat, UPMC/LIP6
  • Ramy Iskander, UPMC/LIP6
Technical Program Committee
  • Marie-Minerve Louerat, UPMC/LIP6
  • Andrei Vladimirescu, ISEP/UCB
  • Costin Anghel, ISEP
  • Ramy Iskander, UPMC/LIP6
Extended MOS-AK/GSA Committee:
  • Chelsea Boone, Director of Research GSA 
  • Kayal Rajendran, Research Analyst GSA
  • Wladek Grabinski, GMC Suisse; MOS-AK/GSA Group Manager
    MOS-AK/GSA North America:
  • Chair: Pekka Ojala, Exar Corporation
  • Geoffrey Coram, Analog Devices
  • Jamal Deen, U.McMaster
  • Roberto Tinti, Agilent EEsof Division
    MOS-AK/GSA South America:
  • Chair: Gilson I Wirth; UFRGS; Brazil
  • Prof. Carlos Galup-Montoro, UFSC; Brazil
  • Sergio Bampi, UFRGS, Brazil
  • Antonio Cerdeira Altuzarra, Cinvestav - IPN, Mexico
    MOS-AK/GSA Europe:
  • Chair: Ehrenfried Seebacher, austriamicrosystems AG
  • Alexander Petr, XFab
  • Benjamin Iniguez, URV 
  • James Victory, Sentinel-IC
    MOS-AK/GSA Asia/Pacific:
  • Chair: Goichi Yokomizo, STARC, Japan
  • Sadayuki Yoshitomi, Toshiba, Japan
  • A.B. Bhattacharyya, JIIT, India
  • Xing Zhou, NTU, Singapore
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No.# 27541
update: March 2011 (rev. F)
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