13th Virtual MOS-AK Workshop in Silicon Valley

Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
13^th International MOS-AK Workshop
Virtual/Online Brunch with the Experts
Silicon Valley, Dec. 10-11, 2020

MOS-AK: Enabling Compact Modeling R&D Exchange

MOS-AK Technical Program Promoters

Sponsor and Online Host

Publishing Partner

Final MOS-AK Program

Important Dates:

Call for Papers - Oct. 2020
2nd Announcement - Nov. 2020
Final Workshop Program - Dec. 2020
MOS-AK Workshop:
in timeframe of IEDM and Q4 CMC Meetings

virtual session 11:00 - 14:00 (PST) on Dec.10, 2020
virtual session 11:00 - 14:00 (PST) on Dec.11, 2020

Agenda

Display Format:

Citation

Citation & Abstract

[MOS-AK]

MOS-AK Opening
W.Grabinski
MOS-AK (EU)

[CMC]

Si2 Compact Model Coalition Highlights: 2020 marks the 25th Anniversary of the CMC
Peter Lee
Si2 CMC

Virtual (i)

MOS-AK session 11:00 - 14:00 (PST) on Dec.10, 2020
Chair: Laurie E. Calvet; CNRS-University Paris-Saclay (F)

[1]

Material Growth, Characterization of III-V & II-VI Compound Semiconductors and its Use for Various Device Applications
Praveen Kumar Saxena
Tech Next Lab Pvt Ltd (IN)

Abstract:
The present state-of-the-art in studying material growth & characterization and device applications including electronic transport in semiconductors is big challenge for industry. Despite the successful application of epitaxy in the fabrication of numerous material systems, there are still many open challenges concerning, for instance, the influence of atomistic processes at the crystal surface on the macroscopic growth behavior. In recent years, a set of complimentary methods have matured that are very useful for understanding processes on the atomic scale. The size of semiconductor devices shrinking toward the size of individual atoms, and increasingly complex material systems are being exploited for the development of new growth processes, which are much sophisticated and poses technological challenges. On the other hand, for the material characterization the use of band structure calculated using density functional theory (DFT), carrier-phonon interactions using similar ab-initio methods, carrier-impurity scattering using sophisticated methods to account for dielectric screening. The computational tools based on DFT suffers with limitations that it can be used for a very small structure of clusters of atoms. The other big limitations of density functional theory are that it doesn't correctly treat the exchange interaction and long-range non-covalent interactions. Semi-empirical methods appear to be most suitable technique to address these issues. Furthermore, it can be easily extended to simulate dynamical properties of the materials. Ensemble Monte Carlo (EMC) technique is the best suited numerical approach for accurate solution of the Boltzmann Equation (BTE) under nonlinear response conditions. To demonstrate a simple and inexpensive theoretical approach for accurate prediction of the low & high field mobility model for binary and ternary wurtzite nitride alloys for entire concentration range have been explored. A detailed real lattice based epitaxial growth technique for II-VI and III-V compounds through MBE & MOCVD reactor's input conditions using EpiGrow Simulator with self-assembly of adatoms allow any kind of structure to be grown on appropriate substrate. The full electronic band structure is simulated by EPM method (using TNL's FullBand simulator) for better understanding of the structural and electronic properties. The carrier transport properties including multiple appropriate scattering mechanisms associated alloys through the solution of BTE through EMC method (using TNL's ElecMob simulator). The difference in present approach from earlier reported results is attributed to using optimized band structures and estimation of electron mobility based on different scattering mechanisms. Various scattering processes included in present analysis are - acoustic, intervalley, optical (Polar), piezoelectric, ionized impurity, Coulomb, surface roughness. The MOS, HEMT, FINFET, TFET and other semiconductor device technologies characterization will be done using TNL's Monte Carlo Particle Device (MCPD) simulator.

[2]

Contact-controlled transistors: Device characteristics and modelling challenges
Radu Sporea
Uni. Surrey (UK)

[3]

Contact-controlled transistors: Specific applications and opportunities
Eva Bestelink
Uni. Surrey (UK)

Virtual (ii)

MOS-AK session
Chair: Larry Nagel; Omega Enterprises Consulting (USA)

[4]

90 Years of Twoport Matrices and its Impact on Device Measurements and Modeling
Franz Sischka
SisConsult Engineering Office (D)

[5]

Some issues on the high-frequency compact modeling of CMOS transistors and related devices
Roberto Murphy
INAOE (MX)

[6]

VAMPyRE: Verilog-A Model Pythonic Rule Enforcer
Geoffrey Coram
Analog Devices, Inc. (USA)

[7]

Simulate 40X Faster with SmartSpice HPP
Jody Matos
Silvaco (USA)

Virtual (iii)

MOS-AK session 11:00 - 14:00 (PST) on Dec.11, 2020
Chair: Anurag Mangla; Semtech Neuchatel (CH)

[8]

Statistical Analysis of MOSFET extracted parameters for n-MOS mismatch modeling.
Juan Pablo Martinez Brito
CEITEC SA/UFRGS (BR)

[9]

Rapid multiscale simulation of nanoscale MOSFETs: Is an interplay between compact models and NEGF possible?
Alexander Kloes
NanoP, THM University of Applied Sciences (D)

[10]

The Effect of Non Rectangular MOS Channels in Modelling High Voltage Lateral MOS
Marco Sambi, Lorenzo Labate, Simona Cozzi, Nicola Holzer
STMicroelectronics (I)

Virtual (iv)

MOS-AK session
Chair: Daniel Tomaszewski, Lukasiewicz - IMiF, Warsaw (PL)

[11]

Nonlinear Embedding Model for the Accelerated Design of PAs with the ASM-HEMT model
Patrick Roblin*, Miles Lindquist*, Nicholas Miller+ and Marek Mierzwinski^
*The Ohio State University, AFRL+, Keysight Corp.^ (USA)

[12]

New analytical model for AOSTFTs
Antonio Cerdeira, Yoanlys Hernandez-Barrios, Magali Estrada, Benjamin Iniguez
CINVESTAV (MX) and URV (SP)

[13]

Unifying the Modeling of Charge Trapping in RTN, 1/f Noise and BTI
Gilson Wirth
UFRGS (BR)

[14]

SPICE Modeling for Display Technologies
Bogdan Tudor
Silvaco (USA)

END

of MOS-AK Virtual Workshop

International MOS-AK Committee:

Committee